Two-dimensional complementary gate-programmable PN junctions for reconfigurable rectifier circuit  

作　　者：Zhe Sheng Yue Wang Wennan Hu Haoran Sun Jianguo Dong Rui Yu David Wei Zhang Peng Zhou Zengxing Zhang 

机构地区：[1]State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China [2]National Integrated Circuit Innovation Center,Shanghai 201203,China

出　　处：《Nano Research》2023年第1期1252-1258,共7页纳米研究（英文版）

基　　金：Authors acknowledge the financial supports from the Ministry of Science and Technology of China(No.2018YFE0118300);the National Key Research and Development Program of China(No.2018YFA0703703);the State Key Laboratory of ASIC&System(No.2021MS003);the Science and Technology Commission of Shanghai Municipality(No.20501130100).

摘　　要：The unique features of ambipolar two-dimensional materials open up a great opportunity to build gate-programmable devices for reconfigurable circuit applications,e.g.,PN junctions for rectifier circuits.However,current-reported rectifier circuits usually consist of one gate-programmable PN junction as the rectifier and one resistor as the load,which are not conductive to voltage output and large-scale integration.Here we propose an approach of complementary gate-programmable PN junctions to assemble reconfigurable rectifier circuit,which include two symmetric back-to-back black phosphorus(BP)/hexagonal boron nitride(h-BN)/graphene heterostructured semi-gate field-effect transistors(FETs)and perform complementary NP and PN junction like complementary metal-oxide-semiconductor(CMOS)circuit.The investigation exhibits that the circuit can effectively reconfigure the circuit with/without rectifying ability,and can process alternating current(AC)signals with the frequency prior 1 KHz and reconfiguration speed up to 25μs.We also achieve the reconfigurable rectifier circuit memory via complementary semi-floating gate FETs configuration.The complementary configuration here should be of low output impedance and low static power consumption,being beneficial for effective voltage output and large-scale integration.

关 键 词：two-dimensional(2D)material PN junction rectifier circuit complementary configuration 

分 类 号：TN43[电子电信—微电子学与固体电子学]