Edge reconstruction of layer-dependentβ-In2Se3/MoS2 vertical heterostructures for accelerated hydrogen evolution  

作　　者：Gonglei Shao Meiqing Yang Haiyan Xiang Song Luo Xiong-Xiong Xue Huimin Li Xu Zhang Song Liu Zhen Zhou 

机构地区：[1]Engineering Research Center of Advanced Functional Material Manufacturing of Ministry of Education,School of Chemical Engineering,Zhengzhou University,Zhengzhou 450001,China [2]Institute of Chemical Biology and Nanomedicine(ICBN),State Key Laboratory of Chemo/Biosensing and Chemometrics,College of Chemistry and Chemical Engineering,Hunan University,Changsha 410082,China [3]College of Life and Environmental Science,Hunan University of Arts and Science,Changde 415000,China [4]School of Physics and Optoelectronics,Xiangtan University,Xiangtan 411105,China [5]Institute of New Energy Material Chemistry,School of Materials Science and Engineering,Nankai University,Tianjin 300350,China

出　　处：《Nano Research》2023年第1期1670-1678,共9页纳米研究（英文版）

基　　金：The work was supported by the National Natural Science Foundation of China(Nos.22175060 and 21975067);Natural Science Foundation of Hunan Province of China(Nos.2021JJ10014 and 2021JJ30092);X.X.X thanks to the National Science Foundation of China(No.12104385);The computational resources were provided by the supercomputer TianHe in Changsha,China.

摘　　要：The layer-dependent properties are still unclarified in two-dimensional(2D)vertical heterostructures.In this study,we layer-bylayer deposited semimetalβ-In2Se3 on monolayer MoS2 to form verticalβ-In2Se3/MoS2 heterostructures by chemical vapor deposition.The defect-mediated nucleation mechanism inducesβ-In2Se3 nanosheets to grow on monolayer MoS2,and the layer number of stackedβ-In2Se3 can be precisely regulated from 1 layer(L)to 13 L by prolonging the growth time.Theβ-In2Se3/MoS2 heterostructures reveal tunable type-Ⅱband alignment arrangement by altering the layer number ofβ-In2Se3,which optimizes the internal electron transfer.Meanwhile,the edge atomic structure ofβ-In2Se3 stacking on monolayer MoS2 shows the reconstruction derived from large lattice mismatch(~29%),and the presence ofβ-In2Se3 also further increases the electrical conductivity ofβ-In2Se3/MoS2 heterostructures.Attributed to abundant layer-dependent edge active sites,edge reconstruction,improved hydrophilicity,and high electrical conductivity ofβ-In2Se3/MoS2 heterostructures,the edge ofβ-In2Se3/MoS2 heterostructures exhibits excellent electrocatalytic hydrogen evolution performance.Lower onset potential and smaller Tafel slope can be observed at the edge of monolayer MoS2 coupled with 13-Lβ-In2Se3.Hence,the outstanding conductive layers coupled with edge reconstruction in 2D vertical heterostructures play decisive roles in the optimization of electron energy levels and improvement of layer-dependent catalytic performance.

关 键 词：In2Se3/MoS2 heterostructure edge reconstruction layer dependent hydrogen evolution reaction MICROREACTOR 

分 类 号：TB383[一般工业技术—材料科学与工程]