Study of surface morphology in GaAs by hydrogen and helium implantation at elevated temperature  

作　　者：Rui Huang Zhiyong Wang Hui Li Qing Wang Yecai Guo 

机构地区：[1]School of Electronic and Information Engineering,Wuxi University,Wuxi 214105,China [2]Institute of Advanced Technology on Semiconductor Optics&Electronics,Institute of Laser Engineering,Beijing University of Technology,Beijing 100124,China

出　　处：《Journal of Semiconductors》2023年第5期27-33,共7页半导体学报（英文版）

基　　金：financially supported by the National Nature Science Foundation of China(Grant No.61673222);Wuxi University Research Start-up Fund for Introduced Talents(Grant No.2022r036)。

摘　　要：In this work,the surface morphology and internal defect evolution process of GaAs substrates implanted with light ions of different fluence combinations are studied.The influence of H and He ions implantation on the atomic mechanism of the blister phenomenon observed after annealing is investigated.Raman spectroscopy is used to measure the surface stress change of different samples before and after implantation and annealing.Optical microscopy and atomic force microscopy are used to characterize the morphology changes of the GaAs surface under different annealing conditions.The evolution of bubbles and defects in GaAs crystals is revealed by transmission electron microscopy.Through this study,it is hoped that ion implantation fluence,surface exfoliation efficiency and exfoliation cost can be optimized.At the same time,it also lays a foundation for the heterointegration of GaAs film on Si.

关 键 词：IMPLANTATION surface ANNEALING 

分 类 号：TN305[电子电信—物理电子学] TQ133.51[化学工程—无机化工]