一种DC~10GHz的低附加相移高衰减精度的开关型衰减器  

A DC-10 GHz Switched-Type Attenuator With Low Additional Phase Shift And High Attenuation Accuracy

作　　者：王楠[1] WANG Nan(The 54th Research Institute of CETC)

机构地区：[1]中国电子科技集团公司第五十四研究所

出　　处：《中国集成电路》2023年第4期50-54,共5页China lntegrated Circuit

摘　　要：本文设计了一种DC~10GHz的带有低附加相移以及高衰减精度的6位开关型衰减器。分析了三种传统的开关型的T型、简化T型以及∏型衰减器的拓扑结构[1],通过在∏型衰减器的结构中采用电感和电容补偿技术,实现在超宽带范围内的低附加相移[2]。该基于55-nm CMOS工艺的6位衰减器,芯片核心版图面积为0.05mm2,仿真结果表明,该衰减器在DC~10GHz频段范围内的插入损耗为3dB~4.3dB,64态的回波损耗均小于10.6dB,衰减误差的均方根值小于0.18dB,64态的衰减附加相移小于2.5度,衰减器在5GHz时处于参考态下的1dB压缩点对应的输入功率为7.7dBm。This paper presents a DC~10GHz 6-bit switched-type attenuator with low additional phase shift and high attenuation accuracy.Three traditional attenuation topologies are employed for the design of the attenuation cells,including the T-type,simplified T-type and∏_-type topologies.[1]the low additional phase shift is achieved in the ultra wideband range by using inductance and capacitance compensation technology in the structure of the∏_-type attenuator.[2]The 6-bit switched-type attenuator is implemented in 55-nm CMOS technology and occupies a core chip area of only 0.05 mm2.The simulation results show that the insertion loss of the reference state is 3~3.4 dB from DC to 10 GHz,the return loss is better than 10.6 dB for all the 64 states.The RMS amplitude error and phase error are less than 0.18 dB and 2.5°over the DC~10 GHz band.The 1dB compression point of the attenuator in the reference state at 5GHz is 7.7 dBm.

关 键 词：衰减器 相控阵 CMOS 开关型 相位补偿 低插入损耗 

分 类 号：TN715[电子电信—电路与系统]