电池保护电路中MOSFET器件常见失效机理研究  

Research on the Common Failure Mechanisms of MOSFET Devices in Battery Protection

作　　者：容志滔 黄雁 RONG Zhitao;HUANG Yan(CEPREI,Guangzhou 511370,China)

机构地区：[1]工业和信息化部电子第五研究所,广东广州511370

出　　处：《电子产品可靠性与环境试验》2023年第2期21-27,共7页Electronic Product Reliability and Environmental Testing

摘　　要：受限于电子设备的内部空间,电池保护电路中MOSFET器件通常采用晶圆级芯片规模封装(WLC-SP)。由于WLCSP的特点,电池保护电路中的MOSFET器件在生产、使用中会出现各种类型的失效模式和失效机理。介绍了采用WLCSP技术封装的MOSFET器件常用的分析方法与设备,结合相关的失效案例,论述了芯片开裂、芯片工艺缺陷、芯片腐蚀和过电应力这4种常见的失效机理,为MOSFET器件及其他电子元器件的失效分析和问题解决提供一定的参考。Limited by the internal space of electronic equipment,Wafer level chip scale packaging(WLCSP)are usually used in MOSFET devices in battery protection circuits.Due to the characteristics of WLCSP,there are various types of failure modes and failure mechanisms in the production and use of MOSFET devices in battery protection circuits.The common analysis methods and equipment used in the failure analysis of MOSFET devices packaged with WLCSP technology.Combined with relevant failure cases,four common failure mechanisms are introduced,including chip cracking,chip process defects,chip corrosion and electrical overstress,which provides a reference for failure analysis and problem solving of MOSFET devices and other electronic components.

关 键 词：电池保护电路 金属氧化物半导体场效应晶体管 晶圆级芯片规模封装 失效分析 失效定位 

分 类 号：TN432[电子电信—微电子学与固体电子学]