退火工艺对HgCdTe材料位错密度及电学性能影响的研究  

Study of annealing processes on dislocation density andelectrical properties of HgCdTe materials

作　　者：邢晓帅 折伟林[1] 杨海燕[1] 郝斐 胡易林 牛佳佳 王鑫[1] 赵东生 XING Xiao-shuai;SHE Wei-lin;YANG Hai-yan;HAO Fei;HU Yi-lin;NIU Jia-jia;WANG Xin;ZHAO Dong-sheng(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2023年第4期566-569,共4页Laser & Infrared

摘　　要：实验分别采用高低温退火和循环变温退火方式对液相外延生长的HgCdTe材料进行饱和汞压热处理,研究了两种热处理工艺对碲镉汞材料位错密度及电学性能的影响。结果表明:相较于高低温退火,经循环变温退火后HgCdTe材料的位错密度有了明显的降低,并且材料的迁移率有了显著的提升。研究发现循环变温退火是一种较好提升HgCdTe材料性能的热处理方法。The effects of high and low temperature annealing and cyclic variable temperature annealing on the dislocation density and electrical properties of HgCdTe materials grown by liquid phase epitaxy are investigated by saturated mercury pressure heat treatment.The results show that compared with high and low temperature annealing,the dislocation density of HgCdTe significantly reduced,and the carrier mobility of the material is significantly improved after cyclic variable temperature annealing.It is found that cyclic variable temperature annealing is a better heat treatment method to improve the properties of HgCdTe materials.

关 键 词：碲镉汞 热处理 位错密度 电学性能 载流子迁移率 

分 类 号：TN213[电子电信—物理电子学]