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作 者:Hongtian Li Shiyu Zhou Jianwei Zhao Tingnan Yan Yuxiao Du Huanfu Zhou Yongping Pu Dawei Wang
机构地区:[1]Shenzhen Institute of Advanced Electronic Materials,Shenzhen Institute of Advanced Technology Chinese Academy of Sciences,Shenzhen 518055,P.R.China [2]Key Laboratory of Nonferrous Materials and New Processing Technology Ministry of Education,School of Materials Science and Engineering Guilin University of Technology,Guilin 541004,P.R.China [3]School of Materials Science and Engineering,Shaanxi Key Laboratory of Green Preparation and Functionalization for Inorganic Materials,Shaanxi University of Science&Technology Xi’an 710021,P.R.China [4]Functional Materials and Acousto-Optic Instruments Institute School of Instrumentation Science and Engineering Harbin Institute of Technology,Harbin 150080,P.R.China
出 处:《Journal of Advanced Dielectrics》2023年第1期39-45,共7页先进电介质学报(英文)
基 金:financed by the National Natural Science Foundation of China(51872175);the International Cooperation Projects of Shaanxi Province(2018KW-027);Guangdong Provincial Key Laboratory(2014B030301014);the Construction of Basic Research Institutions from Shenzhen Science,Technology and Innovation Commission.
摘 要:In this work,novel(1−x)(0.75Na_(0.5)Bi_(0.5)TiO_(3))-0.25Sr(Zr_(0.2)Sn_(0.2)Hf_(0.2)Ti_(0.2)Nb_(0.2))O_(3)-xNaNbO_(3)(NBT-SZSHTN-xNN,x=0.1,0.15,0.2,0.25)ceramics were fabricated.The influence of co-doping of NN and high entropy perovskite oxide(SZSHTN)on the phase structure,microstructure and dielectric properties of NBT-based lead-free ceramics was investigated.Dense microstructure with a grain size of~5μm is observed.When x=0.25,a wide dielectric temperature stable range of−35.4-224.3℃ with a low temperature coefficient of capacitance of<10%is achieved,fulfilling the industry standard of Y9P specification.Furthermore,excellent energy storage performance with recoverable energy density of 2.4 J/cm^(3),discharge efficiency of 71%,power density of 25.495 MW/cm^(3) and discharge rate<200 ns are simultaneously obtained,which shows great potential for high temperature capacitor applications.
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