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作 者:Xiang Cai Sheng Wang Lian-Mao Peng
机构地区:[1]Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics,School of Electronics,Peking University,Beijing 100871,China [2]State Key Laboratory of Advanced Optical Communication System and Networks,School of Electronics,Peking University,Beijing 100871,China
出 处:《Nano Research Energy》2023年第2期182-199,共18页纳米能源研究(英文)
基 金:This work was supported by the National Key Research&Development Program(No.2020YFA0714703);National Science Foundation of China(Nos.62071008 and U21A6004);Ji Hua Laboratory(No.2021B0301030003).
摘 要:Due to its remarkable electrical and optical capabilities,optoelectronic devices based on the semiconducting single-walled carbon nanotube(s-SWCNT)have been studied extensively in the last two decades.First,s-SWCNT is a direct bandgap semiconductor with a high infrared absorption coefficient and high electron/hole mobility.In addition,as a typical one-dimensional material,there is no lattice mismatch between s-SWCNT and any substrates.Another advantage is that the optoelectronic devices of s-SWCNT can be processed at low temperatures.s-SWCNT has intriguing potential and applications in solar cells,light-emitting diodes(LEDs),photodetectors,and three-dimensional(3D)optoelectronic integration.In recent years,along with the advancement of solution purification technology,the high-purity s-SWCNTs film has laid the foundation for constructing large-area,homogenous,and high-performance optoelectronic devices.In this review,optoelectronic devices based on s-SWCNTs film and related topics are reviewed,including the preparation of high purity s-SWCNTs film,the progress of photodetectors based on the s-SWCNTs film,and challenges of s-SWCNTs film photodetectors.
关 键 词:carbon nanotube high purity semiconducting single-walled carbon nanotubes(s-SWCNTs)film PHOTODETECTORS optoelectronic integration
分 类 号:TB383[一般工业技术—材料科学与工程]
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