本征可拉伸阈值型忆阻器及其神经元仿生特性  

Intrinsically Stretchable Threshold Switching Memristor for Artificial Neuron Implementations

作　　者：田雨 朱小健[2] 孙翠 叶晓羽 刘慧媛 李润伟[2] TIAN Yu;ZHU Xiaojian;SUN Cui;YE Xiaoyu;LIU Huiyuan;LI Runwei(School of Materials Science and Chemical Engineering,Ningbo University,Ningbo 315211,China;Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China)

机构地区：[1]宁波大学材料科学与化学工程学院,宁波315211 [2]中国科学院宁波材料技术与工程研究所,宁波315201

出　　处：《无机材料学报》2023年第4期413-420,共8页Journal of Inorganic Materials

基　　金：国家自然科学基金(62174164,61974179,92064011);宁波市自然科学基金(202003N4029);中国科学院科研仪器设备研制项目(YJKYYQ20200030);中国科学院对外合作重点项目(174433KYSB20190038)。

摘　　要：研制具有生物神经元信息功能的柔性电子器件对于发展智能穿戴技术具有重要意义。传统阈值型忆阻器可模仿神经元信息整合功能,但因缺乏本征柔韧性,难以满足应用需求。本工作制备了一种基于本征可拉伸阈值型忆阻器的柔性人工神经元,它由银纳米线–聚氨酯复合介质薄膜和液态金属电极构成。在外加电压下,器件呈现良好的阈值电阻转变特性,这归因于银纳米线间形成非连续银导电细丝的动态通断。该器件可模仿生物神经元的信息整合–发放及脉冲强度和脉冲间隔调制的尖峰放电功能。在20%拉伸应变下,器件工作参数基本保持稳定,性能未发生明显退化。本工作为发展可拉伸柔性人工神经元及下一代智能穿戴设备提供重要材料和技术参考。The exploration of flexible electronic devices with information processing functions of biological neurons is of great significance for the development of intelligent wearable technologies.Due to lack of inherent mechanical flexibility,conventional threshold-switching memristor based on rigid materials that can implement the computing functions of biological neurons is difficult to fulfill the requirements for potential applications in the future.In this work,an intrinsically stretchable threshold-switching memristor was prepared by using silver nanowire-polyurethane composite as the dielectric layer and liquid metal as the electrodes,respectively.Under application of a sweeping voltage,the device exhibited reliable threshold switching characteristics,which was switched from the high resistance state(HRS)to the low resistance state(LRS)during device programming and spontaneously relaxed to the HRS upon voltage application.Further analysis shows that the underlying mechanism can be attributed to the dynamic formation and rupture of discontinuous silver conductive filaments formed between silver nanowires.In the pulse programming mode,memristor device is able to emulate the integration and firing characteristics of biological neurons,suggesting its great potential as an artificial neuron.Moreover,the pulse amplitude and pulse interval modulated neuronal spiking behaviors are successfully replicated using such devices.Under 20%tensile strain,the threshold-switching memristor shows negligible changes in the operating parameters during device switching and neuronal function implementations,suggesting its excellent mechanical flexibility and stability.This work provides important guidelines for the development of high-performance stretchable artificial neuronal devices and next-generation intelligent wearable systems.

关 键 词：神经形态计算 忆阻器 阈值开关 可拉伸 人工神经元 

分 类 号：TN389[电子电信—物理电子学]