Silicon Vacancy Color Centers in 6H-SiC Fabricated by Femtosecond Laser Direct Writing  

作　　者：Zhanqi Zhou Zongwei Xu Ying Song Changkun Shi Kun Zhang Bing Dong 

机构地区：[1]State Key Laboratory of Precision Measuring Technology and Instruments,Laboratory of Micro/Nano Manufacturing Technology,Tianjin University,Tianjin 300072,China

出　　处：《Nanomanufacturing and Metrology》2023年第1期69-78,共10页纳米制造与计量（英文）

基　　金：supported by the‘111’project by the State Administration of Foreign Experts Affairs and the Ministry of Education of China(Grant No.B07014).

摘　　要：As a single photon source,silicon vacancy(V_(Si))centers in wide bandgap semiconductor silicon carbide(SiC)are expected to be used in quantum technology as spin qubits to participate in quantum sensing and quantum computing.Simultaneously,the new direct femtosecond(fs)laser writing technology has been successfully applied to preparing V_(Si)s in SiC.In this study,6H-SiC,which has been less studied,was used as the processed material.V_(Si) center arrays were formed on the 6H-SiC surface using a 1030-nm-wavelength fs pulsed laser.The surface was characterized by white light microscopy,atomic force microscopy,and confocal photoluminescence(PL)/Raman spectrometry.The effect of fs laser energy,vector polarization,pulse number,and repetition rate on 6H-SiC V_(Si) defect preparation was analyzed by measuring the V_(Si) PL signal at 785-nm laser excitation.The results show that fs laser energy and pulse number greatly influence the preparation of the color center,which plays a key role in optimizing the yield of V_(Si)s prepared by fs laser nanomachining.

关 键 词：Silicon carbide Silicon vacancy color center Femtosecond laser writing Confocal photoluminescence/Raman spectroscopy 

分 类 号：TN24[电子电信—物理电子学]