再生处理手段对p型多晶PERC太阳电池性能及热辅助光诱导衰减(LeTID)的影响  

EFFECT OF REGENERATION METHODS ON PERFORMANCE OF P-TYPE MULTICRYSTALLINE SILICON PERC SOLAR CELLS AND LIGHT ELEVATED TEMPERATURE INDUCED DEGRADATION(LeTID)

作　　者：吁洵哲 纪方旭 周春兰[1,2] Yu Xunzhe;Ji Fangxu;Zhou Chunlan(Key Laboratory of Solar Thermal Energy and Photovoltaic System,Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Changdian Xinneng Co.,Ltd.,Wuhan 430000,China)

机构地区：[1]中国科学院电工研究所中国科学院太阳能热利用及光伏系统重点实验室,北京100190 [2]中国科学院大学,北京100049 [3]长电新能有限责任公司,武汉430000

出　　处：《太阳能学报》2023年第4期426-431,共6页Acta Energiae Solaris Sinica

基　　金：国家重点研发计划(2018YFB1500303);国家自然科学基金(61874120,61904180)。

摘　　要：该文实验采用p型多晶PERC太阳电池,通过调整产线链式光注入(LS)设备中的风机功率和传送带速实现对光注入温度和时间的控制。结果表明,增加光注入的时间和温度能使太阳电池获得更好的效率稳定性。对比研究光注入以及先电注入后光注入两种再生处理手段对p型多晶硅PERC太阳电池抗热辅助光诱导衰减(LeTID)效应的影响。研究结果表明,光注入能使太阳电池中存在的非复合活性的缺陷前驱体在高强度光热的条件下解离或将其转化为稳定的缺陷。在75℃,1 sun的标准LeTID稳定性测试条件下,结合电注入与光注入再生处理手段的样品表现出更佳的LeTID稳定性。In this study,the effect of regeneration methods on the performance and the light and elevated temperature induced degradation(LeTID) of p-type multicrystalline silicon PERC(mc-Si PERC)solar cells is researched.The temperature and time of light soaking are controlled by adjusting the cooling powers and belt speeds of the chain light soaking equipment in the processing line.The results show that increasing the time and temperature of light soaking can make the solar cell obtain better LeTID stability.The effects of light soaking and electrical injection followed by light soaking on the thermal assisted LeTID of p-type multicrystalline silicon PERC solar cells is compared.Light soaking can make the non-composite active defect precursor in solar cells disappear or convert into stable defects under high-intensity photothermal conditions.Under the standard LeTID stability test conditions of 75 ℃ and 1 sun,light soaking presents the better result of reducing LeTID,and the methods combined with current injection process and light soaking regeneration show the best LeTID stability of mc-Si PERC solar cells.

关 键 词：太阳电池 多晶硅 缺陷 LeTID 光注入工艺 稳定性 

分 类 号：TM914.4[电气工程—电力电子与电力传动]