基于GO电子阻挡层的量子点发光二极管优化  

Optimization of Quantum Dot Light-Emitting Diodes Based on GO Electron Barrier Layer

作　　者：丁磊 张芹 闫珍珍 孙娟 谢亮生 潘琛 DING Lei;ZHANG Qin;YAN Zhen-zhen;SUN Juan;XIE Liang-sheng;PAN Chen(School of Testing and Opto-electronic Engineering,Nanchang Hangkong University,Nanchang 330063,China)

机构地区：[1]南昌航空大学测试与光电工程学院,南昌330063

出　　处：《南昌航空大学学报（自然科学版）》2023年第1期29-36,共8页Journal of Nanchang Hangkong University(Natural Sciences)

基　　金：国家自然科学基金(12164928)。

摘　　要：量子点发光二极管高性能的关键是实现空穴与电子之间的电荷平衡。本文将氧化石墨烯(Graphene oxide,GO)引入到量子点发光层和电子传输层之间作为电子阻挡层,通过调节GO的厚度,使器件的亮度提高了96.7%,电流效率提高146%。光电性能的改善主要归因于加入电子阻挡层的能带结构,增大了电子传输层与量子点层之间的能级势垒。研究结果表明,引入GO层能够减少电子的注入数目,从而提高器件性能。The key to the high performance of QDS is the charge balance between holes and electrons.In this study,graphene oxide(GO)was introduced between the luminescence layer and the electron transport layer of quantum dots as an electron barrier layer.With the optimized GO thickness,the brightness and current efficiency of the device are improved by 96.7%and 146%,respectively.These improvements are mainly attributed to the increased energy level barrier resulting from the band structure of the electron barrier layer.The results show that the GO layer can reduce the number of electron injection and improve the device performance.

关 键 词：量子点 电子阻挡层 电荷平衡 氧化石墨烯 能级势垒 

分 类 号：TN383[电子电信—物理电子学]