S波段小型化大功率功放模块设计与实现  

Design and Implementation of S-band Miniaturization High Power Amplifier Module

作　　者：刘登宝[1] 王卫华[1] LIU Dengbao;WANG Weihua(Nanjing Research Institute of Electronics Technology,Nanjing Jiangsu 210039,China)

机构地区：[1]南京电子技术研究所,江苏南京210039

出　　处：《现代雷达》2023年第3期84-87,共4页Modern Radar

摘　　要：现代S波段相控阵雷达对T/R组件发射通道小型化和大功率的需求越来越高。GaN功率器件具有高功率密度、高效率和突出的热属性,采用GaN功率器件来构建功放模块是实现小型化和大功率的首选方案。文中采用载片式内匹配GaN功率放大器、GaN MMIC功放芯片、Lange电桥及微组装工艺,研制出一种S波段功放模块,体积小,重量轻,在10%带宽内,实现了输出功率大于150 W、功率增益超过35 dB、效率超过50%的性能指标,相较于基于分立封装功率管构建的功放模块,重量和体积上的优势巨大,可广泛应用于现代轻型化相控阵雷达。The miniaturization and high power of transmitter channel power amplifiers requirements for modern S-band phased array radars are increasing.GaN power devices have high power density,high efficiency and outstanding thermal properties.The power amplifier module constructed with GaN power devices is the preferred solution to realize miniaturization and high power.In this paper,a miniaturized high power amplifier module of S band is developed by using flat-type internal matching GaN power amplifier,GaN MMIC chip,Lange bridge and micro-assembly process.The module is small and light,and the test results show that the module output power is greater than 150 W,the power gain is greater than 35 dB and the efficiency is greater than 50% in 10% bandwidth.Compared with the power amplifier module based on discrete package power transistors,it has huge advantages in weight and volume,and can be widely used in modern lightweight phased array radar.

关 键 词：功放模块 GaN功率器件 小型化 大功率 载片式 内匹配 Lange电桥 

分 类 号：TN722.75[电子电信—电路与系统]