X波段双模功率MMIC设计  

X-band Dual Mode Power MMIC Design

作　　者：刘新宇 郭润楠 张斌[1,2] LIU Xinyu;GUO Runnan;ZHANG Bin(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]固态微波器件与电路全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2023年第2期181-186,共6页Research & Progress of SSE

摘　　要：基于有源负载调制的多阻抗匹配技术,采用0.25μm GaN HEMT工艺,研制了一款工作在X波段双模功率放大器芯片,使功率放大器在峰值及回退10 dB两种输出功率模式下均具有较高的效率。采用对称双路三级放大拓扑设计,利用多阻抗匹配与电压切换方式实现双模工作。主功放设计兼顾高功率与低功率模式下的输出功率与效率;辅功放兼顾低功率模式下输出匹配网络呈现高阻状态与高功率模式下匹配网络实现宽带匹配两种状态。测试结果表明,在25℃环境温度、脉宽100μs、占空比10%脉冲测试下,8.5~13.0 GHz频率范围内,功率放大器的高功率模式饱和输出功率最高可达47.5 dBm,功率附加效率最高达到43%;10~12 GHz频率范围内,低功率模式输出功率可达37 dBm,功率附加效率最高达到27%。Based on the multi-impedance matching technology of active load modulation,utilizing O.25μm GaN HEMT technology,a X-band dual-mode power amplifier(PA)was developed.High efficiency could be achieved under two output power modes:peak and power back off 10 dB.The symmetrical two-channel three-stage topology design was adopted and dual-mode operation was realized by multi-impedance matching and voltage switching.Main PA was designed taking into account output power and efficiency in both high power(HP)and low power(LP)mode,while the design of auxiliary PA considered both high resistance state of output matching network in LP mode and the broadband matching state in HP mode.Test results show that under the pulse test at 25C with pulse width of 100μs and duty ratio of 10%,the peak output power(P_(out))of HP mode reaches up to 47.5 dBm and the power additional efficiency(PAE)reaches 43% in 8.5-13.0 GHz.In 10-12 GHz,P_(out) of LP mode can reach 37 dBm,and PAE is up to 27%.

关 键 词：负载调制 氮化镓(GaN) 双模 功率放大器 单片微波集成电路(MMIC) 高电子迁移率晶体管(HEMT) 

分 类 号：TN492[电子电信—微电子学与固体电子学] TN722.7.5