基于二维半导体材料浮栅存储器的研究进展:从材料到结构  

Research progress of floating gate memory based on two-dimensional semiconductor materials:From material to structure

作　　者：李浩宇 李文庆 蒋昌忠[1] 肖湘衡[1,2] LI Haoyu;LI Wenqing;JIANG Changzhong;XIAO Xiangheng(Department of Physics,Wuhan University,Wuhan 430072,China;Hubei Yangtze Memory Laboratories,Wuhan 430010,China)

机构地区：[1]武汉大学物理科学与技术学院,湖北武汉430072 [2]湖北江城实验室,湖北武汉430010

出　　处：《物理实验》2023年第5期1-14,共14页Physics Experimentation

基　　金：国家自然科学基金资助(No.12025503,No.12074293,No.12275198)。

摘　　要：半导体浮栅存储器在半导体存储器乃至整个数据存储行业都占据着较大的市场份额,目前在计算机、便携式设备存储器等领域都有广泛应用.随着存储器件进一步小型化和集成化,在未来需要新材料和新结构对浮栅存储器进行革新以延续摩尔定律的发展.具有原子级厚度的二维层状半导体材料具有优异的电学性能和稳定性,被广泛认为是极具潜力的新型半导体材料之一,可用于下一代半导体浮栅存储器.本文主要介绍近年来二维半导体材料在浮栅存储器领域的应用,并对其未来的发展趋势进行了思考和展望.Semiconductor floating gate memory occupies a growing market share in semiconductor memory and even the whole data storage industry.It is widely used in computer,portable device memory and other fields,and has great potential for enterprise storage.With the development of memory devices to a high degree of integration,miniaturization,new materials and structures will be needed to innovate the floating gate memory in the future to continue the development of Moore’s Law.Two-dimensional layered semiconductor materials in atom-scale have excellent electrical properties and stability,and are widely considered to be one of the potential new semiconductor materials for the next generation of semiconductor floating gate memory.In this paper,the application of two-dimensional semiconductor materials in the field of floating gate memory in recent years is introduced,and its future development trend is considered and prospected.

关 键 词：浮栅存储器 二维材料 异质结构 闪存 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TN32[自动化与计算机技术—计算机科学与技术]