E波段GaAs PHEMT工艺有源六倍频器MMIC  

E-Band GaAs PHEMT Process Active Sextupler MMIC

作　　者：陈长友[1] 刘会东[1] 崔璐 CHEN Changyou;LIU Huidong;CUI Lu(The 13th Research Institute of CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《现代信息科技》2023年第9期60-62,67,共4页Modern Information Technology

摘　　要：基于GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计了一款输出频率在E波段的有源六倍频器微波单片集成电路(MMIC)。片上集成六倍频器及输出驱动放大器,采用PHEMT管进行倍频,具有较高输出功率及较小的芯片尺寸。在片探针测试结果显示该倍频器芯片在输入功率5dBm时,输出66~88GHz频率范围内,输出功率大于13dBm,谐波抑制20dBc,功耗600 mW,芯片尺寸为3.0 mm×1.4 mm×0.07 mm。An active sextupler MMIC with output frequency in the E-band is designed based on the GaAs PHEMT process.The wafer integrates sextupler and output drive amplifier,adopts PHEMT for frequency doubler,which has higher output power and smaller chip size.The microwave probe on wafer testing system results show that when the input power of the frequency multiplier chip is 5 dBm,output power is within the frequency range from 66 to 88 GHz,the output power is above 13 dBm,the harmonic suppression is 20 dBc,and the power consumption is 600 mW,and the chip size is 3.0 mm×1.4 mm×0.07 mm.

关 键 词：GaAs赝配高电子迁移率晶体管 单片微波集成电路 E波段 有源六倍频器 

分 类 号：TN43[电子电信—微电子学与固体电子学]