碳化硅功率器件的串扰问题及抑制方法  

Crosstalk Problems and Suppression Methods of Silicon Carbide Power Devices

作　　者：冯静波 客金坤 彭晗 辛晴 许航宇 薛泓林 FENG Jingbo;KE Jinkun;PENG Han;XIN Qing;XU Hangyu;XUE Honglin(State Key Laboratory of Advanced Power Transmission Technology,State Grid Smart Grid Research Institute Co.,Ltd.,Beijing 102209,China;School of Electrical and Electronic Engineering,Huazhong University of Science and Technology,Wuhan,Hubei 430074,China;State Grid Shanxi Electric Power Company,Information Communication Branch Company,Taiyuan,Shanxi 030012,China)

机构地区：[1]先进输电技术国家重点实验室(国网智能电网研究院有限公司),北京102209 [2]华中科技大学电气与电子工程学院,湖北武汉430074 [3]国网山西省电力公司信息通信分公司,山西太原030012

出　　处：《广东电力》2023年第5期126-135,共10页Guangdong Electric Power

基　　金：国家电网有限公司总部科技项目(5700-202258309A-2-0-QZ)。

摘　　要：为了改善碳化硅功率器件的快速开关瞬态带来的串扰问题,研究碳化硅功率器件的驱动参数对串扰问题的影响,总结抑制串扰的驱动策略,并提出串扰抑制的谐振型驱动方法。首先,明确米勒电容和共源极电感的耦合作用,分析得到半桥结构中碳化硅功率器件的串扰机理;其次,通过LTspice仿真研究碳化硅功率器件驱动器的栅极电阻和栅源电容对串扰的影响;然后,提出抑制串扰的驱动策略和谐振型驱动方法;最后,通过双脉冲测试电路实验观测串扰影响,并对比分析所提方法与有源米勒钳位方法的实验结果。研究结果表明:在开通串扰下,有源米勒钳位方法下的栅源电压负尖峰为-13.2 V,串扰抑制的谐振型驱动方法下的电压负尖峰仅为-7.3 V;在关断串扰下,有源米勒钳位方法下的栅源电压正尖峰为-2.4 V,串扰抑制的谐振型驱动方法下的电压正尖峰仅为-3.81 V。上述结果验证了所提方法的有效性。In order to suppress the crosstalk problem caused by the fast switching transient of silicon carbide power devices,this paper studies the influence of drive parameters on the crosstalk problem,summarizes the drive strategy to suppress the crosstalk,and proposes a resonant drive method for crosstalk suppression.Firstly,the coupling effects of miller capacitor and common source inductor are clarified,and the crosstalk mechanism of the silicon carbide power device in the half-bridge structure is analyzed.Secondly,the influence of the gate resistor and gate-source capacitor of the driver on the crosstalk problem is studied by LTspice simulation.Subsequently,the driving strategy and resonant driving method for crosstalk suppression are proposed.Finally,the crosstalk effects are observed experimentally by a double-pulse test circuit,and the results are compared by the active miller clamp method and the proposed method respectively.The results show that the negative spike of the gate source voltage under the turn-on crosstalk is-13.2 V for the active miller clamp method,while the negative spike of the resonant drive method with crosstalk suppression is only-7.3 V.Under the turn-off crosstalk,the positive spike of the gate source voltage under the active miller clamp method is-2.4 V,while the positive spike of the resonant drive method with crosstalk suppression is only-3.81 V.

关 键 词：碳化硅功率器件 米勒电容 共源极电感 驱动策略 有源米勒钳位 谐振驱动 

分 类 号：TM13[电气工程—电工理论与新技术] TN304.24[电子电信—物理电子学]