Efficient solution-processed InP quantum-dots light-emitting diodes enabled by suppressing hole injection loss  

作　　者：Wenxuan Du Chunyan Cheng Jianjun Tian 

机构地区：[1]Institute for Advanced Materials and Technology,University of Science and Technology Beijing,Beijing 100083,China

出　　处：《Nano Research》2023年第5期7511-7517,共7页纳米研究（英文版）

基　　金：the Beijing Municipal Natural Science Foundation(No.2222061);the National Natural Science Foundation of China(Nos.51961135107 and 51774034);the National Key Research and Development Program of China(No.2017YFE0119700).

摘　　要：Solution-processed cadmium-based quantum dots(QDs)light-emitting diodes(QLEDs)have shown promising for high-definition display panels due to their high colour purity and low-cost fabrication,but the toxicity still is a big threat.InP is considered as the most promising cadmium-free material to achieve high performance QLEDs,however,the performance of the InP-based QLEDs is far behind of the cadmium-based counterparts.Here,we report high efficiency InP-based QLEDs with more than 20%of external quantum efficiency(EQE)by suppressing hole injection loss.This suppression is achieved by doping a strong Lewis acid into a Lewis base poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)to form a Lewis acid-base adduct hole-transport layer(HTL),which improves the hole mobility of the HTL,reduces the hole transfer barrier between HTL and QDs layer to increase hole transport capability.This eventually leads to a more balanced carrier-injection through accelerating hole-injection to match well with the rate of electron-injection,thus suppressing the hole injection loss in the QLED.The InP-based QLED shows EQE of 20.4%,current efficiency of 25.3 cd·A^(−1),turn-on voltage of 2.0 V,luminance of 24,000 cd·m^(−2).This strategy would be a constructive approach to reduce hole loss for p-n junction optoelectronics.

关 键 词：InP quantum dot light-emitting diode hole-transport layer high efficiency 

分 类 号：TN312.8[电子电信—物理电子学]