Gate-tunable high-performance broadband phototransistor array of two-dimensional PtSe_(2) on SOI  

作　　者：Yexin Chen Qinghai Zhu Xiaodong Zhu Yijun Sun Zhiyuan Cheng Jing Xu Mingsheng Xu 

机构地区：[1]School of Micro-Nano Electronics,State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China [2]State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China [3]College of Information Science&Electronic Engineering,Zhejiang University,Hangzhou 310027,China [4]Key Laboratory of Ocean Observation-Imaging Testbed of Zhejiang Province,Ocean College,Zhejiang University,Zhoushan 316021,China

出　　处：《Nano Research》2023年第5期7559-7567,共9页纳米研究（英文版）

基　　金：the National Natural Science Foundation of China(Nos.62090030/62090031,51872257,51672244,and 62274145);the National Key R&D Program of China(No.2021YFA1200502);the Natural Science Foundation of Zhejiang Province(No.LZ20F040001);the Zhejiang Province Key R&D Pprogram(No.2020C01120).

摘　　要：Two-dimensional(2D)layered materials have attracted extensive research interest in the field of high-performance photodetection due to their high carrier mobility,tunable bandgap,stability,other excellent properties.Herein,we propose a gate-tunable,high-performance,self-driving,wide detection range phototransistor based on a 2D PtSe_(2)on silicon-oninsulator(SOI).Benefiting from the strong built-in electric field of the PtSe_(2)/Si heterostructure,the phototransistor has a fast response time(rise/fall time)of 36.7/32.6μs.The PtSe_(2)/Si phototransistor exhibits excellent photodetection performance over a broad spectral range from ultraviolet to near-infrared,including a responsivity of 1.07 A/W and a specific detectivity of 6.60×10^(9)Jones under 808 nm illumination at zero gate voltage.The responsivity and specific detectivity of PtSe_(2)/Si phototransistor at 5 V gate voltage are increased to 13.85 A/W and 1.90×10^(10) Jones under 808 nm illumination.Furthermore,the fabricated PtSe_(2)/Si phototransistor array shows excellent uniformity,reproducibility,long-term stability in terms of photoresponse performance with negligible variation between pixel cells.The architecture of present PtSe_(2)/Si on SOI platform paves a new way of a general strategy to realize high-performance photodetectors by combining the advantages of both 2D materials and conventional semiconductors which is compatible with current Si-complementary metal oxide semiconductor(CMOS)process.

关 键 词：two-dimensional PtSe_(2) silicon-on-insulator(SOI) HETEROJUNCTION PHOTOTRANSISTOR gate voltage modulation 

分 类 号：TN364[电子电信—物理电子学]