A two-dimensional tetragonal structure of vanadium telluride  

在线阅读下载全文

作  者:Zizhao Liu Ye Tao Zhiqiang Cui Yi Ji Xuhan Zhou Peigen Li Yunwei Zhang Dingyong Zhong 

机构地区:[1]School of Physics,Sun Yat-sen University,Guangzhou 510275,China [2]State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University,Guangzhou 510275,China

出  处:《Nano Research》2023年第5期7749-7755,共7页纳米研究(英文版)

基  金:the National Natural Science Foundation of China(Nos.11974431,92165204,and 11832019);Guangdong Major Project of Basic and Applied Basic Research(No.2021B0301030002).

摘  要:The family of vanadium chalcogenides with variable stoichiometry and abundant crystallographic structures are promising platforms for realizing exotic emergent phenomena.Here,we report on a novel two-dimensional(2D)tetragonal structure of vanadium telluride(VTe)grown by molecular beam epitaxy.The atomic structures and electronic properties are revealed by scanning tunneling microscopy and first-principles calculations.Different from the hexagonal or trigonal lattices of 2D VTe_(2),the 2D VTe with a V:Te ratio of 1:1 exhibits an uncommon square lattice.Non-zero differential conductivity at the Fermi energy detected by scanning tunneling spectroscopy reveals the metallic feature of VTe.Meanwhile,Friedel oscillations are observed near chiral point defects and domain walls,illustrating the itinerant nature of the electrons close to the Fermi energy.Our firstprinciples structure searches identify a 2D body-centered cubic(bcc)-like structure with a favorable formation energy to be the candidate of the metallic phase of the tetragonal VTe obtained experimentally.Based on our calculations the 2D bcc-like structure possesses a strong 2D antiferromagnetic order.Our work enriches the family of vanadium chalcogenides and provides a possible 2D antiferromagnetic material for fabricating advanced spintronic devices.

关 键 词:vanadium telluride molecular beam epitaxy scanning tunneling microscopy two-dimensional magnetism first-principles calculation 

分 类 号:TG14[一般工业技术—材料科学与工程]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象