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作 者:Pengyu Zhang Chuang Hou Wei Shao Runsheng Liu Zitong Wu Guoan Tai
出 处:《Nano Research》2023年第5期7837-7843,共7页纳米研究(英文版)
基 金:the National Natural Science Foundation of China(No.61774085);the Natural Science Foundation of Jiangsu Province(No.BK20201300);the Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures,Nanjing University of Aeronautics and Astronautics(NUAA)(No.MCMS-I-0420G02);the Fundamental Research Funds for the Central Universities(No.NP2022401);the Fund of Prospective Layout of Scientific Research for NUAA(No.ILA22009);the Priority Academic Program Development of Jiangsu Higher Education Institutions,the Funding for Outstanding Doctoral Dissertation in NUAA(No.BCXJ22-02);the Interdisciplinary Innovation Fund for Doctoral Students of NUAA(No.KXKCXJJ202201);the Postgraduate Research&Practice Innovation Program of Jiangsu Province(No.KYCX22_0329).
摘 要:Ternary materials composed of boron,carbon,nitrogen have drawn tremendous attention because of their suitable band gap,high carrier mobility,high thermal conductivity.The properties can effectively compensate for the deficiencies of other typical carbon-based and boron-based materials,such as graphene,borophene,hexagonal boron nitride.Although the theoretical progress has advanced the development of ternary materials,it is still a great challenge to synthesize the new nanostructures with good crystallinity and high yield at low dimensional scales.Herein,we report that BC_(2)N quantum dots(QDs)can be successfully prepared by in-situ two-step thermal decomposition of sodium cyanoborohydride in a hydrogen-rich environment.The results show that the as-prepared BC_(2)N QDs have good crystallinity and high yield.The BC_(2)N QDs have an average lateral size of 3.7 nm and an average thickness of 2.83 nm.The experimental results show that the QDs are semiconducting with an optical band gap of 2.15 eV.Furthermore,a fabricated BC_(2)N QDs-based nonvolatile memory shows a low SET operating voltage(0.74 V)and a high ON/OFF ratio(more than 1.74×10^(3))as well as good stability.
关 键 词:BC_(2)N quantum dots GRAPHENE borophene non-volatile memory
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