稀土元素La、Ce、Gd在忆阻器中的应用研究进展  

Research Progress in the Applications of Rare Earth Elements La,Ce and Gd in Memristors

作　　者：董莹莹 张静[1] 魏淑华[1] 王艳蓉 闫江 Dong Yingying;Zhang Jing;Wei Shuhua;Wang Yanrong;Yan Jiang(School of Information,North China University of Technology,Beijing 100144,China)

机构地区：[1]北方工业大学信息学院,北京100144

出　　处：《微纳电子技术》2023年第4期517-525,共9页Micronanoelectronic Technology

摘　　要：忆阻器是最有潜力的新型非易失性存储器之一,用于忆阻器的电极和介质层的材料被工业界和学术界广泛研究。稀土元素在忆阻器中可以作为介质层材料和掺杂元素,具有广阔的应用前景。首先简述了忆阻器的基本结构、工作原理和电阻转变机制,接着以镧(La)、铈(Ce)、钆(Gd)三种在忆阻器中应用最广泛的稀土元素为例,对稀土元素在忆阻器领域中的应用优势进行了简单阐述,重点介绍了国内外研究中对于稀土元素的氧化物、稀土掺杂忆阻器、其他元素掺杂稀土元素忆阻器、钙钛矿锰氧化物等方面的应用,总结了稀土元素在忆阻器中的应用研究进展。最后对稀土元素忆阻器目前面临的问题和对应的解决方法进行了讨论,并总结展望稀土忆阻器未来的发展方向和应用前景。The memristor is one of the most promising new nonvolatile memories.The materials for the electrode and dielectric layer of memristors are widely studied in industry and academia.Rare earth elements can be used as dielectric layer materials and doping elements in memristors,which has a broad application prospect.The basic structure,working principle and resistance transformation mechanism of memristors are briefly described.Then,the application advantages of rare earth elements in the field of memristors are briefly described by taking lanthanum(La),cerium(Ce)and gadolinium(Gd),the three most widely used rare earth elements in the memristor as examples.The applications of rare earth element oxides,rare earth doped memristors,rare earth element memristors doped with other elements and perovskite manganese oxides in domestic and foreign studies are introduced emphatically,and the research progress in the application of rare earth elements in memristors is summarized.Finally,the current problems and corresponding solutions of rare earth element memristors are discussed,and the future development direction and application prospect of rare earth memristors are summarized and prospected.

关 键 词：忆阻器 稀土元素 镧(La) 铈(Ce) 钆(Gd) 

分 类 号：TN79[电子电信—电路与系统]