植入式医疗设备暴露于低频磁场的安全性仿真  

Simulation for the Safety Assessment of Implantable Medical Devices Exposed to Low-frequency Magnetic Fields

作　　者：齐殿元 邹方竹 赵竞 Qi Dianyuan;Zou Fangzhu;Zhao Jing

机构地区：[1]中国信息通信研究院

出　　处：《安全与电磁兼容》2023年第3期59-63,共5页Safety & EMC

摘　　要：介绍了人体暴露在低频磁场中可能产生的几种健康效应以及国际非电离辐射防护委员会(ICNIRP)规定的人体内感生效应的限值。建立了由无线充电系统和人体模型组成的数值模型,利用电磁场数值计算的方法,对暴露于低频磁场中佩戴植入式医疗设备的人体模型进行了电磁辐射的安全性评估。评估结果表明,低频磁场对金属植入物具有一定的影响,但均在ICNIRP限值以内。后续还需要进一步研究佩戴植入式医疗设备的患者暴露于低频磁场中的安全性。This paper introduced the possible effects of human exposure to low-frequency magnetic fields and the limits for induced effects in the human body defined by the International Commission on Non-ionizing Radiation Protection(ICNIRP).Also,a numerical model composed of a wireless power system and a human body model was used to simulate the electromagnetic interference(EMI)in implantable medical devices(IMD).The purpose of this simulation was to assess the exposure level for patients with IMD.The results stated that although the interference with IMD had been demonstrated,the field strength was lower than the limit defined by ICNIRP.However,further studies are needed to assess the safety for patients with metallic implants exposed to low-frequency electric fields.

关 键 词：低频磁场暴露 植入式医疗设备 无线功率传输 电磁辐射 

分 类 号：TH77[机械工程—仪器科学与技术]