Dielectric barrier discharge-based defect engineering method to assist flash sintering  

作　　者：Xinhao Zhao Nianping Yan Yueji Li Zikui Shen Rongxia Huang Chen Xu Xuetong Zhao Xilin Wang Ruobing Zhang Zhidong Jia 

机构地区：[1]Guangdong Engineering Technology Research Center of Power Equipment Reliability in Complicated Coastal Environments,Tsinghua Shenzhen International Graduate School,Tsinghua University,Shenzhen 518055,China [2]State Grid Jiangxi Electric Power Research Institute,Nanchang 330096,China [3]School of Electric Power Engineering,South China University of Technology,Guangzhou 510641,China [4]School of Electromechanical Engineering,Guangdong University of Technology,Guangzhou 510006,China [5]Institute of Materials,China Academy of Engineering Physics,Mianyang 621907,China [6]fSchool of Electrical Engineering,Chongqing University,Chongqing 400044,China

出　　处：《Journal of Advanced Ceramics》2023年第5期1046-1057,共12页先进陶瓷（英文）

基　　金：supported by the National Natural Science Foundation of China(No.52077118);the Guangdong Basic and Applied Basic Research Foundation(No.2021A1515011778);State Key Laboratory of Power System Operation and Control,Tsinghua University(No.SKLD22KM01).

摘　　要：Oxygen vacancy OV plays an important role in a flash sintering (FS) process. In defect engineering, the methods of creating oxygen vacancy defects include doping, heating, and etching, and all of them often have complex processes or equipment. In this study, we used dielectric barrier discharge (DBD) as a new defect engineering technology to increase oxygen vacancy concentrations of green billets with different ceramics (ZnO, TiO_(2), and 3 mol% yttria-stabilized zirconia (3YSZ)). With an alternating current (AC) power supply of 10 kHz, low-temperature plasma was generated, and a specimen could be treated in different atmospheres. The effect of the DBD treatment was influenced by atmosphere, treatment time, and voltage amplitude of the power supply. After the DBD treatment, the oxygen vacancy defect concentration in ZnO samples increased significantly, and a resistance test showed that conductivity of the samples increased by 2–3 orders of magnitude. Moreover, the onset electric field (E) of ZnO FS decreased from 5.17 to 0.86 kV/cm at room temperature (RT);while in the whole FS, the max power dissipation decreased from 563.17 to 27.94 W. The defect concentration and conductivity of the green billets for TiO_(2) and 3YSZ were also changed by the DBD, and then the FS process was modified. It is a new technology to treat the green billet of ceramics in very short time, applicable to other ceramics, and beneficial to regulate the FS process.

关 键 词：flash sintering(FS) ZnO dielectric barrier discharge(DBD) oxygen vacancy OV defect engineering 

分 类 号：TM28[一般工业技术—材料科学与工程] TQ174.75[电气工程—电工理论与新技术]