原位集成光浮栅的多层SnS_(2)/少层MoS_(2)异质结用于高性能光电探测器与光学成像  

Multilayer SnS_(2)/few-layer MoS_(2)heterojunctions with in-situ floating photogate toward high-performance photodetectors and optical imaging application

作　　者：易华鑫 杨海林 马楚荣 马宇航 叶俏珏 陆健婷 王婉 郑照强 邓泽祥 邹逸超 姚健东 杨国伟 Huaxin Yi;Hailin Yang;Churong Ma;Yuhang Ma;Qiaojue Ye;Jianting Lu;Wan Wang;Zhaoqiang Zheng;Zexiang Deng;Yichao Zou;Jiandong Yao;Guowei Yang(State Key Laboratory of Optoelectronic Materials and Technologies,Nanotechnology Research Center,School of Materials Science&Engineering,Sun Yatsen University,Guangzhou 510275,China;Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices,Sun Yat-sen University,Guangzhou 510275,China;Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications,Institute of Photonics Technology,Jinan University,Guangzhou 511443,China;School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China;School of Science,Guilin University of Aerospace Technology,Guilin 541004,China)

机构地区：[1]State Key Laboratory of Optoelectronic Materials and Technologies,Nanotechnology Research Center,School of Materials Science&Engineering,Sun Yatsen University,Guangzhou 510275,China [2]Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices,Sun Yat-sen University,Guangzhou 510275,China [3]Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications,Institute of Photonics Technology,Jinan University,Guangzhou 511443,China [4]School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China [5]School of Science,Guilin University of Aerospace Technology,Guilin 541004,China

出　　处：《Science China Materials》2023年第5期1879-1890,共12页中国科学（材料科学（英文版）

基　　金：supported by the National Natural Science Foundation of China(U2001215,52272175,and 12104517);the Natural Science Foundation of Guangdong Province(2021A1515110403 and 2022A1515011487);the Science and Technology Projects in Guangzhou(202201011232);the Fundamental Research Funds for the Central Universities,Sun Yat-sen University(22qntd0101);the One-Hundred Talents Program of Sun Yat-sen University;the State Key Laboratory of Optoelectronic Materials and Technologies。

摘　　要：自单层MoS_(2)光电晶体管问世以来,二维层状材料一直被认为是实现下一代新型光电器件与系统的最引人瞩目的候选材料之一.然而,大多数报道的二维层状材料光电探测器都存在一定的缺点,如响应率低、暗电流大、比探测率低、开关比低、响应速率慢等.在本研究中,通过堆叠由大气压化学气相沉积技术所生长的MoS_(2)和SnS_(2)纳米片,制备出了多层SnS_(2)/少层MoS_(2)范德华异质结.相应的SnS_(2)/MoS_(2)异质结光电探测器展示出了具有竞争力的综合性能:大开关比(171)、高响应率(28.3 A W^(-1)),以及出色的比探测率(1.2×10^(13)Jones).此外,该器件还实现了响应/恢复时间低至1.38 ms/600μs的超快响应速率.其优异的性能与SnS_(2)/MoS_(2)异质结的Ⅱ型能带排列以及原位形成的无缝光浮栅的协同作用相关,这有助于分离光激发的电子-空穴对,并延长非平衡载流子的寿命.得益于出色的光敏性,该SnS_(2)/MoS_(2)器件实现了概念验证的光学成像应用.总体而言,本研究为实现具有优异综合性能的先进光电探测器提供了独特视角.Since the successful preparation of the monolayer MoS_(2)phototransistor,two-dimensional(2D)layered materials(2DLMs)have been regarded as one of the most compelling candidates toward the implementation of the next generation of novel optoelectronic devices and systems.However,most reported 2DLM photodetectors suffer from specific shortcomings,such as low responsivity,large dark current,low specific detectivity,low on/off ratio,and sluggish response rate.Herein,multilayer SnS_(2)/few-layer MoS_(2)van der Waals heterostructures have been constructed by stacking the MoS_(2)and SnS_(2)nanosheets grown by a single atmospheric pressure chemical vapor deposition method.The SnS_(2)/MoS_(2)heterojunction photodetector demonstrates competitive overall performance with a large on/off ratio of 171,a high responsivity of 28.3 A W^(−1),and an excellent detectivity of 1.2×10^(13) Jones.In addition,an ultrafast response rate with the response/recovery time down to 1.38 ms/600μs is achieved.The excellent properties are associated with the synergy of type-II band alignment of SnS_(2)/MoS_(2)and the in-situ formed seamless floating photogate,which contribute to separating the photoexcited electron-hole pairs and extending the carrier lifetime.Taking advantage of the excellent photosensitivity,the SnS_(2)/MoS_(2)device demonstrates proof-of-concept optical imaging application.On the whole,this study provides a distinctive perspective to implement advanced photodetectors with competitive overall performance.

关 键 词：in-situ floating photogate 2D layered materials van der Waals heterojunctions PHOTODETECTORS optical imaging 

分 类 号：TB34[一般工业技术—材料科学与工程] TN15[电子电信—物理电子学]