Application of silicon carbide temperature monitors in 49-2 swimming-pool test reactor  

作　　者：宁广胜 张利民 钟巍华 王绳鸿 刘心语 汪定平 何安平 刘健 张长义 Guang-Sheng Ning;Li-Min Zhang;Wei-Hua Zhong;Sheng-Hong Wang;Xin-Yu Liu;Ding-Ping Wang;An-Ping He;Jian Liu;Chang-Yi Zhang(Reactor Engineering Technology Research Institute,China Institute of Atomic Energy,Beijing 102413,China;School of Nuclear Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Information Science and Engineering,Lanzhou University,Lanzhou 730000,China)

机构地区：[1]Reactor Engineering Technology Research Institute,China Institute of Atomic Energy,Beijing 102413,China [2]School of Nuclear Science and Technology,Lanzhou University,Lanzhou 730000,China [3]School of Information Science and Engineering,Lanzhou University,Lanzhou 730000,China

出　　处：《Chinese Physics B》2023年第5期97-101,共5页中国物理B（英文版）

摘　　要：High purity SiC crystal was used as a passive monitor to measure neutron irradiation temperature in the 49-2 research reactor.The SiC monitors were irradiated with fast neutrons at elevated temperatures to 3.2×10^(20)n/cm^(2).The isochronal and isothermal annealing behaviors of the irradiated SiC were investigated by x-ray diffraction and four-point probe techniques.Invisible point defects and defect clusters are found to be the dominating defect types in the neutron-irradiated SiC.The amount of defect recovery in SiC reaches a maximum value after isothermal annealing for 30 min.Based on the annealing temperature dependences of both lattice swelling and material resistivity,the irradiation temperature of the SiC monitors is determined to be~410℃,which is much higher than the thermocouple temperature of 275℃ recorded during neutron irradiation.The possible reasons for the difference are carefully discussed.

关 键 词：silicon carbide irradiation temperature monitor research reactor 

分 类 号：TQ163.4[化学工程—高温制品工业] TL411[核科学技术—核技术及应用]