Oneε-Ga_(2)O_(3)-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity  

作　　者：安跃华 高震森 郭雨 张少辉 刘增 唐为华 Yue-Hua An;Zhen-Sen Gao;Yu Guo;Shao-Hui Zhang;Zeng Liu;Wei-Hua Tang(School of Optoelectronic Engineering,Guangdong Polytechnic Normal University,Guangzhou 510665,China;School of Information Engineering,Guangdong University of Technology,Guangzhou 510006,China;Innovation Center for Gallium Oxide Semiconductor(IC-GAO),College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China;Institute of Microscale Optoelectronics,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China)

机构地区：[1]School of Optoelectronic Engineering,Guangdong Polytechnic Normal University,Guangzhou 510665,China [2]School of Information Engineering,Guangdong University of Technology,Guangzhou 510006,China [3]Innovation Center for Gallium Oxide Semiconductor(IC-GAO),College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China [4]Institute of Microscale Optoelectronics,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China

出　　处：《Chinese Physics B》2023年第5期158-163,共6页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Ganrt No.62004047)。

摘　　要：Theε-Ga_(2)O_(3) thin film was grown on sapphire substrate by using metalorganic chemical vapor deposition(MOCVD)method,and then was used to fabricate a deep-ultraviolet(DUV)photodetector(PD).Theε-Ga_(2)O_(3) thin film shown good crystal quality and decent surface morphology.Irradiated by a 254-nm DUV light,the photodetector displayed good optoelectronic performance and high wavelength selectivity,such as photoresponsivity(R)of 175.69 A/W,detectivity(D*)of 2.46×10^(15) Jones,external quantum efficiency(EQE)of 8.6×10^(4)%and good photocurrent-intensity linearity,suggesting decent DUV photosensing performance.At 5 V and under illumination with light intensity of 800μW/cm2,the photocurrent gain is as high as 859 owing to the recycling gain mechanism and delayed carrier recombination;and the photocurrent gain decreases as the incident light intensity increases because of the recombination of photogenerated carriers by the large photon flux.

关 键 词：metastable Ga_(2)O_(3) photocurrent gain LINEARITY DUV detection 

分 类 号：TN15[电子电信—物理电子学]