Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir_(20)Mn_(80)  

作　　者：熊丹荣 蒋宇昊 朱道乾 杜奥 郭宗夏 卢世阳 王春旭 夏清涛 朱大鹏 赵巍胜 Danrong Xiong;Yuhao Jiang;Daoqian Zhu;Ao Du;Zongxia Guo;Shiyang Lu;Chunxu Wang;Qingtao Xia;Dapeng Zhu;Weisheng Zhao(Fert Beijing Institute,MIIT Key Laboratory of Spintronics,School of Integrated Circuit Science and Engineering,Beihang University,Beijing 100191,China;Hefei Innovation Research Institute,Beihang University,Hefei 230013,China;Beihang–Goertek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao 266000,China)

机构地区：[1]Fert Beijing Institute,MIIT Key Laboratory of Spintronics,School of Integrated Circuit Science and Engineering,Beihang University,Beijing 100191,China [2]Hefei Innovation Research Institute,Beihang University,Hefei 230013,China [3]Beihang–Goertek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao 266000,China

出　　处：《Chinese Physics B》2023年第5期648-654,共7页中国物理B（英文版）

基　　金：the Tencent Foundation through the XPLORER PRIZE;the National Key Research and Development Program of China(Grant Nos.2018YFB0407602 and 2021YFB3601303);the National Natural Science Foundation of China(Grant Nos.61627813,11904017,92164206,and 61571023)。

摘　　要：Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.

关 键 词：non-collinear antiferromagnets anomalous Hall effect magnetization switching spin–orbit torque 

分 类 号：O469[理学—凝聚态物理]