高速异型掺杂的硅基槽波导调制器  

High-Speed Hetero-Doped Silicon-Based Slot Waveguide Modulator

作　　者：袁华江 孙崇磊 赵佳[1] Yuan Huajiang;Sun Chongei;Zhao Jia(School of Information Science and Engineering,Shandong University,Qingdao 266237,Shandong,China)

机构地区：[1]山东大学信息科学与工程学院,山东青岛266237

出　　处：《光学学报》2023年第7期210-217,共8页Acta Optica Sinica

基　　金：国家重点研发计划重点专项(2021YFB2800301)。

摘　　要：针对硅基单端推挽调制器的pn结结电容大、调制效率低的问题,设计出一种基于异型掺杂和槽波导结构的硅基调制器。通过槽波导结构和L型掺杂增大了耗尽区与光场相互作用,与传统脊波导相比,在相同调制效率下,槽波导的结电容降低了24%,带宽提高了32%。采用T型轨道的电极实现阻抗和折射率的匹配,4 V偏压下调制带宽达到42 GHz,实现了峰峰值电压V_(pp)=2 V驱动下70 Gbit/s的OOK信号调制,眼图消光比达5.2 dB。ObjectiveIn recent years,with the rapidly growing transmission capacity of global optical communication networks,silicon photonics(SiP),featuring compatibility with CMOS and high integration,has attracted great attention in optical communication systems,in which the modulator is an important part of the optical communication link.Mach-Zehnder(MZ)modulator based on traveling-wave electrode(TWE)carrier depletion has been widely employed in practical communication equipment because of its thermal stability and high robustness.However,the large junction capacitance and low modulation efficiency of the traditional ridge waveguide modulator limit its performance.In recent years,academic circles have made innovations in junction structures.Heteromorphic structures such as interleaved pn junction increase the interaction area between the light field and carrier,and improve the phase shifting efficiency.However,this is achieved at the expense of junction capacitance and bandwidth.Additionally,the TWE of the modulator must be well designed to ensure the matching between the refractive indexes of the RF signal and the optical signal,and the matching in electrode impedance to reduce the reflection at the source and the terminal to ensure the modulation depth.This paper aims at the large pn junction capacitance and low modulation efficiency of the silicon-based modulator with a single-drive pushpull scheme.We propose a hetero-doped silicon-based slot waveguide modulator to increase the bandwidth on the basis of ensuring modulation efficiency.Methods The whole design is divided into two parts of pn junction structure and electrode design.pn junction is formed by ion doping into the silicon waveguide,in which the boron atom is doped into the silicon waveguide to form the p region of pn junction,and the phosphorus atom is doped into the n region of pn junction.The top and bottom of the silicon waveguide are coated with silicon dioxide cladding.The two L-doped pn junctions and the intermediate heavily doped n++region are reversel

关 键 词：光学器件 电光调制器 行波电极 马赫-曾德尔调制器 

分 类 号：O436[机械工程—光学工程]