Improving the performance of high-power broad-area lasers by suppressing cavity modes propagating in the lateral dimension  

作　　者：范建 周旭彦 张伟桥 王宇飞 渠红伟 齐爱谊 郑婉华 Jian Fan;Xuyan Zhou;Weiqiao Zhang;Yufei Wang;Hongwei Qu;Aiyi Qi;Wanhua Zheng(Laboratory of Solid-State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Weifang Academy of Advanced Opto-Electronic Circuits,Weifang 261071,China;College of Future Technology,University of Chinese Academy of Sciences,Beijing 101408,China)

机构地区：[1]Laboratory of Solid-State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [4]Weifang Academy of Advanced Opto-Electronic Circuits,Weifang 261071,China [5]College of Future Technology,University of Chinese Academy of Sciences,Beijing 101408,China

出　　处：《Chinese Optics Letters》2023年第4期69-73,共5页中国光学快报（英文版）

基　　金：supported by the National Key R&D Program of China(No.2021YFA1400604);the National Natural Science Foundation of China(Nos.91850206 and 62075213)。

摘　　要：We first study the effect of cavity modes propagating in the lateral dimension on high-power semiconductor lasers with a large stripe width.A sidewall microstructure was fabricated to prevent optical feedback of lateral resonant modes.Theoretically,we demonstrate the existence of lateral resonant modes in the Fabry–Perot cavity with a large stripe width.Experimentally,we design the corresponding devices and compare them with conventional broad-area diode lasers.About a 15%reduction in threshold current and a 27%increase in maximum electro-optical conversion efficiency are achieved.The amplified spontaneous emission spectrum is narrowed,which proves that lateral microstructures suppress optical feedback of lateral resonant modes.Under a large continuous-wave operation,the maximum output power of laser device is43.03 W,about 1 W higher than that of the standard broad-area laser at 48 A.

关 键 词：high power broad area laser resonant mode amplified spontaneous emission 

分 类 号：TN248[电子电信—物理电子学]