Optical and electrical properties of Sb-doped β-Ga_(2)O_(3) crystals grown by OFZ method  

作　　者：李百中 李鹏坤 张璐 田瑞丰 赛青林 潘明艳 王斌 陈端阳 刘有臣 夏长泰 齐红基 Baizhong Li;Pengkun Li;Lu Zhang;Ruifeng Tian;Qinglin Sai;Mingyan Pan;Bin Wang;Duanyang Chen;Youchen Liu;Changtai Xia;Hongji Qi(Key Laboratory of Materials for High Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Hangzhou Institute of Optics and Fine Mechanics,Hangzhou 311421,China)

机构地区：[1]Key Laboratory of Materials for High Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]Hangzhou Institute of Optics and Fine Mechanics,Hangzhou 311421,China

出　　处：《Chinese Optics Letters》2023年第4期100-104,共5页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(NSFC)(Nos.51972319,52002386,and 52072183);the Science and Technology Commission of Shanghai Municipality(No.19520744400);the Shanghai Science and Technology Commission(No.20511107400)。

摘　　要：Sb-doped β-Ga_(2)O_(3) crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of high quality.Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice.The carrier concentration of the Sb-doped single crystals increased from 9.55 × 10^(16) to 8.10 × 10^(18) cm^(-3),the electronic mobility depicted a decreasing trend from 153.1 to108.7 cm~2·V^(-1)·s^(-1),and the electrical resistivity varied from 0.603 to 0.017 Ω·cm with the increasing Sb doping concentration.The un-doped and Sb-doped β-Ga_(2)O_(3) crystals exhibited good light transmittance in the visible region;however,the evident decrease in the infrared region was caused by increase in the carrier concentration.The Sb-doped β-Ga_(2)O_(3) single crystals had high transmittance in the UV region as well,and the cutoff edge appeared at 258 nm.

关 键 词：Sb-dopedβ-Ga_(2)O_(3) crystal growth optical properties electrical properties 

分 类 号：O73[理学—晶体学]