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作 者:JUNYANG NIE ZHI ZHANG KONGJIE CHEN YIFENG LIU SHUANG HE ZHONGHANG HUANG XIAONING ZHANG JIE SUN FAN ZHANG YONGSHENG WU QUN YAN
机构地区:[1]Faculty of Electronic and Information Engineering,Xi’an Jiaotong University,Xi’an 710049,China [2]Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China,and National and Local United Engineering Laboratory of Flat Panel Display Technology,College of Physics and Information Engineering,Fuzhou University,Fuzhou 350100,China [3]Quantum Device Physics Laboratory,Department of Microscience and Nanotechnology,Chalmers University of Technology,Göteborg 41296,Sweden [4]Fujian Prima Optoelectronics Company Ltd.,Fuzhou 350000,China [5]Rich Sense Electronics Technology Inc.,Jinjiang 362200,China
出 处:《Photonics Research》2023年第4期549-557,共9页光子学研究(英文版)
基 金:Fujian Provincial Projects(2021HZ0114,2021J01583,2021L3004);Fujian Science Technology Innovation Laboratory for Optoelectronic Information of China(2020ZZ110,2021ZZ122);National Key Research and Development Program of China(2021YFB3600104)。
摘 要:Micro-LEDs are one of the most promising candidates for next-generation displays,yet they are inconvenienced by the efficiency reduction induced by the sidewall defects when pursuing further scaled-down device dimensions.We have systematically investigated both the size and temporal dependence of micro-LEDs.Micro-LED arrays with a mesa size ranging from 7 to 100μm were prepared for display purposes.The luminance and external quantum efficiency(EQE)were measured and discussed.Surprisingly,micro-LED arrays with a smaller mesa size exhibit a higher EQE under 100 ns pulse duration operation when compared with longer pulse duration operations.Under certain short-pulsed excitation,a 7×7μm^(2)micro-LED array even exhibits a>20%higher EQE as compared to the direct current(DC)or the long duration pulse operation condition.We thus concluded that the notorious efficiency reduction induced by sidewall defects in small-sized micro-LED arrays could be significantly reduced by applying short-pulse voltages.
分 类 号:TN873[电子电信—信息与通信工程]
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