Foundry manufacturing of tight-confinement,dispersion-engineered,ultralow-loss silicon nitride photonic integrated circuits  

作　　者：ZHICHAO YE HAIYAN JIA ZHANGJUN HUANG CHEN SHEN JINBAO LONG BAOQI SHI YI-HAN LUO LAN GAO WEI SUN HAIRUN GUO JIJUN HE JUNQIU LIU 

机构地区：[1]Qaleido Photonics,Hangzhou 310000,China [2]International Quantum Academy,Shenzhen 518048,China [3]Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen 518055,China [4]Department of Optics and Optical Engineering,University of Science and Technology of China,Hefei 230026,China [5]Key Laboratory of Specialty Fiber Optics and Optical Access Networks,Shanghai University,Shanghai 200444,China [6]Key Laboratory of Radar Imaging and Microwave Photonics,Ministry of Education,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China [7]Hefei National Laboratory,University of Science and Technology of China,Hefei 230088,China

出　　处：《Photonics Research》2023年第4期558-568,共11页光子学研究（英文版）

基　　金：Guangdong Provincial Key Laboratory(2019B121203002);Hetao Shenzhen-Hong Kong Science and Technology Innovation Cooperation Zone Project(HZQB-KCZYB-2020050);China Postdoctoral Science Foundation(2022M721482);National Natural Science Foundation of China(12261131503)。

摘　　要：The foundry development of integrated photonics has revolutionized today’s optical interconnect and datacenters.Over the last decade,we have witnessed the rising of silicon nitride(Si_(3)N_(4)) integrated photonics,which is currently transferring from laboratory research to foundry manufacturing.The development and transition are triggered by the ultimate need for low optical loss offered by Si_(3)N_(4),which is beyond the reach of silicon and III-V semiconductors.Combined with modest Kerr nonlinearity,tight optical confinement,and dispersion engineering,Si_(3)N_(4) has today become the leading platform for linear and Kerr nonlinear photonics,and it has enabled chip-scale lasers featuring ultralow noise on par with table-top fiber lasers.However,so far all the reported fabrication processes of tight-confinement,dispersion-engineered Si_(3)N_(4) photonic integrated circuits(PICs)with optical loss down to few dB/m have only been developed on 4-inch(100 mm diameter)or smaller wafers.Yet,to transfer these processes to established CMOS foundries that typically operate 6-inch or even larger wafers,challenges remain.In this work,we demonstrate the first foundry-standard fabrication process of Si_(3)N_(4) PICs with only 2.6 dB/m loss,thickness above 800 nm,and near 100%fabrication yield on 6-inch(150 mm diameter)wafers.Such thick and ultralow-loss Si_(3)N_(4) PIC enables low-threshold generation of soliton frequency combs.Merging with advanced heterogeneous integration,active ultralow-loss Si_(3)N_(4) integrated photonics could pave an avenue to addressing future demands in our increasingly information-driven society.

关 键 词：DISPERSION SOLITON TIGHT 

分 类 号：TN40[电子电信—微电子学与固体电子学]