逆导型IGBT电压回跳现象在电路应用中的影响分析  

Impact Analysis of Voltage Snapback Effect of Reverse Conducting IGBT in Circuit Applications

作　　者：黄靖杰 马柯 犬石昌秀 张明[1] HUANG Jingjie;MA Ke;INUISHI Masahide;ZHANG Ming(Schoolof Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China;Graduate Schoolof Information,Production and Systems,Waseda University,Kitakyushu 8080135,Japan)

机构地区：[1]上海交通大学电气工程系,上海200240 [2]早稻田大学院生产信息系统研究科,日本北九州8080135

出　　处：《电源学报》2023年第3期183-192,共10页Journal of Power Supply

摘　　要：逆导型IGBT(RC-IGBT)是一种新型功率半导体器件,实现了IGBT和续流二极管的片内集成,具有体积小、成本低、功率密度高、正温度系数、良好的功率循环能力和关断特性等诸多优势。RC-IGBT正向导通时存在电压回跳现象,建立物理模型详细分析其产生机理及影响因素,得出了缓冲层掺杂浓度是决定回跳电压大小的重要因素。进一步通过控制变量法,利用TCAD仿真软件,从导通特性、并联均流特性和开关特性三个方面详细测试,分析了具有不同程度回跳现象的RC-IGBT在实际电路应用中的影响。通过合理的参数选择,可将回跳电压控制在可接受的范围内,并提高了器件的综合性能,为RC-IGBT设计优化和实际应用提供了有价值的参考和理论指导。The reverse conducting insulated gate bipolar transistor(RC-IGBT)is a novel type of power semiconductor device,which realizes the on-chip integration of IGBT and freewheeling diode.It has many advantages,such as a small size,a low cost,a high power density,a positive temperature coefficient,a good power cycle capability and soft turn-off characteristics.When it works in a forward conducting mode,the voltage snapback effect will occur.In this paper,the corresponding physical model was established to analyze the mechanism and influencing factors.It is concluded that the buffer doping concentration is an important factor that determines the snapback voltage.Furthermore,through the control variable method and TCAD simulation software,the influences of different degrees of snapback effect of RC-IGBT on its practical circuit applications were tested and analyzed in detail from three aspects of conduction characteristics,parallel current-sharing characteristics and switching characteristics.Through a reasonable parameter selection,the snapback voltage can be controlled within an acceptable range,thus improving the comprehensive performance of the device.The research in this paper provides valuable reference and theoretical guidance for the design optimization and practical applications of RC-IGBT in the future.

关 键 词：逆导型IGBT 回跳现象 并联均流测试 软开关测试 

分 类 号：TN32[电子电信—物理电子学]