高电源电压抑制比带隙基准电压源的设计  

Design of Bandgap Voltage Reference with High PSRR

作　　者：何恩沛 吕辉[1,2] 吴松 任佳锐 He Enpei;Li Hui;Wu Song;Ren Jiarui(School of Chip Industry,Hubei University of Technology,Wuhan 430068,China;School of Science,Hubei University of Technology,Wuhan 430068,China;College of Electronic and Optical Engineering,Nankai University,Tianjin 300350,China)

机构地区：[1]湖北工业大学芯片产业学院,湖北武汉430068 [2]湖北工业大学理学院,湖北武汉430068 [3]南开大学电子信息与光学工程学院,天津300350

出　　处：《南开大学学报（自然科学版）》2023年第2期31-36,共6页Acta Scientiarum Naturalium Universitatis Nankaiensis

基　　金：湖北省高等学校优秀中青年科技创新团队计划项目(T201907);国家电网有限公司总部科技项目(5700-202155257A-0-0-00)。

摘　　要：为了提高LDO的电压性能,设计了一款电压基准.基于带隙基准温度补偿的原理,通过增加运放、RC滤波器的方式改变了电路的结构,使得带隙基准的电源抑制比(PSRR)和温度系数得到了优化,并且改变了核心电路中MOS管与电阻的连接方式,让输出基准电压(V_(REF))可以在2-4 V之间调整.从仿真结果得知,当电源电压为2 V时,输出基准电压为1.19 V;温度在-40-85℃变化时,温度系数为1.9918 ppm/℃;高频电源电压抑制比为-72 dB@10 MHz.In order to improve the voltage performance of LDO, a voltage reference is designed. Based on the principle of bandgap reference temperature compensation, the structure of the circuit is changed by increasing the operational amplifier and RC filter, so that the power supply rejection ratio and temperature coefficient of the bandgap reference are improved. The connection between MOS tube and resistor in the core circuit has been changed so that the output reference voltage(V_(REF)) can be adjusted between 2 V to 4 V. From the simulation results, when the power supply voltage is 2 V, the output reference voltage is 1.19 V. The temperature coefficient is 1.991 8 ppm/℃ when the temperature varies from -40 to 85 ℃. High frequency power supply voltage rejection ratio is -72 dB@10 MHz.

关 键 词：带隙基准 多级运算放大器 电源电压抑制比 温度系数 

分 类 号：TN402[电子电信—微电子学与固体电子学]