Ni-Se共掺杂下对AgSnO_(2)触头材料电性能的影响研究  

Effect of Ni-Se Co-doping on Electrical Properties of AgSnO_(2)Contact materials

作　　者：程思远 朱建国[1] 刘文涛 CHENG Siyuan;ZHU Jianguo;LIU Wentao(College of Electrical Engineering&New Energy,China Three Gorges University,Hubei Yichang 443002,China)

机构地区：[1]三峡大学电气与新能源学院,湖北宜昌443002

出　　处：《电工材料》2023年第3期13-18,共6页Electrical Engineering Materials

摘　　要：AgSnO_(2)触头材料是一种环保型低压触头材料,具备良好的耐电弧以及抗熔焊能力,所以目前已经逐渐代替银氧化镉材料。采用金属元素与非金属元素共掺杂的方式对SnO_(2)的导电性能进行改良。运用CASTEP软件对元素掺杂前后的各项性能进行了仿真试验。结果表明:当以Se元素单掺杂时,晶胞体积有小幅度增加;以Ni元素单掺杂时,晶胞体积小幅度缩减;而以Ni-Se两种元素共掺杂时,晶胞体积虽然略微增加但是整体介于Se元素和Ni元素单掺杂时的晶胞体积之间。与未掺杂元素时的SnO_(2)不同,元素掺杂后晶胞禁带宽度明显变小,其中Ni-Se两种元素共掺杂时的禁带宽度最小,表明电子可以更加容易跃迁,AgSnO_(2)的导电性也最好;共掺杂时费米能级附近的峰值与局域性下降,原子间的成键结合力更强,AgSnO_(2)材料也更加稳定。AgSnO_(2)contact material is an environmentally friendly low-voltage contact material.Due to its good arc resistance and fusion welding resistance,it has begun to gradually replace silver cadmium oxide materials.The method of co-doping with metal elements and non-metal elements was used to improve the comductivity of SnO_(2).The CASTEP software was used to simulate the performance before and after the element doping.The results indicated that:when doped by Se,the unit cell volume increases slightly;and when doped by Ni,the unit cell volume decreases slightly;and when the Ni-Se two elements are co-doped,the unit cell volume increases slightly,but the whole is between the unit cell volume when the Se element and the Ni element are single-doped.Unlike SnO_(2)when the element is not doped,the element doping makes the cell forbidden band width significantly smaller.Among them,the band gap when Ni-Se two elements are co-doped has the smallest value,which means that electrons can be easier transited,and the conductivity is also the best for the transition;the peak value and locality near the Fermi level decrease during co-doping,and the bonding force between atoms is stronger,making the SnO_(2)material more stable.

关 键 词：AgSnO_(2)电触头材料 第一性原理分析 元素掺杂 费米能级 导电性 

分 类 号：TM201.44[一般工业技术—材料科学与工程]