阳极刻蚀提升Ga_(2)O_(3)肖特基势垒二极管击穿特性  

Improvement of Breakdown Characteristics of Ga,O,Schottky Barrier Diodes by Anodic Etching

作　　者：郭艳敏 杨玉章 冯志红[1,2] 王元刚 刘宏宇 韩静文 Guo Yanmin;Yang Yuzhang;Feng Zhihong;Wang Yuangang;Liu Hongyu;Han Jingwen(The 13th Research Institute,CETC,Shijiazhuang 050051,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]固态微波器件与电路全国重点实验室,石家庄050051

出　　处：《半导体技术》2023年第5期375-379,共5页Semiconductor Technology

基　　金：青年人才托举工程资助项目(2020-JCJQ-QT-080)。

摘　　要：提出了一种采用阳极刻蚀提升Ga_(2)O_(3)肖特基势垒二极管(SBD)击穿特性的新方法。基于氢化物气相外延(HVPE)法生长的Ga_(2)O_(3)材料制备了Ga_(2)O_(3)纵向SBD。在完成阳极制备后,对阳极以外的Ga_(2)O_(3)漂移区进行了不同深度的刻蚀,刻蚀完成后,在器件表面生长了SiO2介质层,随后制备了场板结构。测试结果显示,刻蚀后器件的比导通电阻小幅上升,而反向击穿电压均大幅提升。刻蚀深度为300 nm的β-Ga_(2)O_(3)SBD具有最优特性,其比导通电阻(Ron,sp)为2.5 mΩ·cm^(2),击穿电压(Vbr)为1410 V,功率品质因子(FOM)为795 MW/cm^(2)。该研究为高性能Ga_(2)O_(3)SBD的制备提供了一种新方法。A new method for improving the breakdown characteristics of Ga_(2)O_(3)Schottky barrier diodes(SBDs)by anodic etching was proposed.Based on Ga_(2)O_(3)material grown by hydride vapor phase epitaxy(HVPE)method,vertical Ga_(2)O_(3)SBDs were fabricated.After completing the anode preparation,the Ga_(2)O_(3)drift region outside the anode was etched at different depths.After etching,a SiO,dielectric layer was grown on the device surface,and the field plate structure was prepared subsequently.The test results show that the specific on-resistance of the etched devices increased slightly,while the reverse breakdown voltage of the etched devices improved observably.Theβ-Ga_(2)O_(3)SBD with etching depth of 300 nm has optimal characteristics with a specific on-resistance(R.n.sp)of 2.5 mQ·cm^(2),a breakdown voltage(Vb.)of 1410 V,and a power figure-of-merit(FOM)of 795 MW/cm^(2).This study provides a new method for the preparation of high-performance Ga_(2)O_(3)SBD.

关 键 词：氧化镓(Ga_(2)O_(3)) 肖特基势垒二极管(SBD) 刻蚀 击穿电压 功率品质因子(FOM) 

分 类 号：TN311.7[电子电信—物理电子学]