基于0.18μm CMOS工艺的300GHz高响应度探测器  

A 300 GHz High-Responsivity Detector Based on 0.18μm CMos Technology

作　　者：徐雷钧[1] 汪附凯 白雪[1] 张子宇 赵心可 姜高峰 Xu Leijun;Wang Fukai;Bai Xue;Zhang Ziyu;Zhao Xinke;Jiang Gaofeng(School of Electrical and Information Engineering,Jiangsu University,Zhenjiang 212013,China)

机构地区：[1]江苏大学电气信息工程学院,江苏镇江212013

出　　处：《半导体技术》2023年第5期408-413,442,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61874050)。

摘　　要：基于0.18μm CMOS工艺设计了一种300 GHz高响应度探测器。该探测器集成了双馈差分天线和双场效应管(FET)对称差分自混频电路。双馈差分天线较单馈天线有更高的精确度及更优的抗干扰性。差分自混频电路能有效地抑制共模信号,减小噪声输入。双场效应管后增加一级放大电路,将自混频电路输出的微弱信号进一步放大以增大响应度。天线与电路间的匹配网络实现了信号的最大功率传输。在全波电磁场仿真软件HFSS下对双馈天线进行建模与仿真优化,并与电路进行联合仿真。结果显示探测器在栅源电压为0.43 V、输入功率为-40 dBm时,最大响应度为11.25 kV/W,最小噪声等效功率为115pW/√Hz。A 300 GHz high-responsivity detector was designed based on 0.18μm CMOS technology.The detector integrates a double-fed differential antenna and a double field effect transistor(FET)symmetric differential self-mixing circuit.The double-fed differential antenna has higher accuracy and better anti-interference performance than a single-fed antenna.Differential self-mixing circuit can effectively suppress common-mode signals and reduce input noise.In addition,an amplifying circuit was added behind the double FET to further amplify the weak signal output by the self-mixing circuit and increase the responsivity.The matching network between the antenna and circuit realizes the maximum power transmission of the signal.Based on the full-wave electromagnetic field simulator HFSS,the double-fed antenna was modeled,its characteristic parameters were simulated and optimized,and the joint simulation with the circuit was carried out.The results show that when the gate-source voltage is 0.43 V and the input power is-40 dBm,the detector has the maximum responsivity of 11.25 kV/W and the minimum noise equivalent power of 115 pW/√Hz..

关 键 词：互补金属氧化物半导体(CMOS) 高响应度 双馈差分天线 对称差分自混频电路 放大电路 

分 类 号：TN850[电子电信—信息与通信工程] TN432