压接型IGBT器件内部杂散电感差异对瞬态电流分布影响规律研究  

Effect of Stray Inductance Difference on Transient Current Distribution in Press-Pack IGBT Devices

作　　者：彭程 李学宝 范迦羽 赵志斌 崔翔 Peng Cheng;Li Xuebao;Fan Jiayu;Zhao Zhibin;Cui Xiang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University,Beijing 102206 China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京102206

出　　处：《电工技术学报》2023年第11期2850-2860,共11页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金-国家电网公司联合基金重点项目(U1766219)资助。

摘　　要：压接型IGBT器件内部多颗芯片的并联连接是提高其电流等级的重要手段。然而,IGBT芯片之间的瞬态电流不均衡是限制其电流提升的主要原因之一。研究压接型IGBT器件内部的瞬态电流分布规律对于规模化IGBT并联封装设计具有重要意义。该文首先通过有限元软件提取了压接型IGBT器件内部的栅极、集电极和发射极的杂散电感,得到三个杂散电感随IGBT芯片不同位置的变化规律;其次对三个杂散电感差异下的电流分布进行了理论分析,发现电流分布主要受到功率回路和驱动回路的公共支路上杂散电感的影响;同时分别对开通和关断过程中IGBT芯片内部的载流子变化过程进行分析,发现发射极杂散电感差异主要影响开通过程的电流不均衡;然后针对三个杂散电感差异分别进行电路仿真,得到杂散电感差异对电流分布的影响规律,仿真结果验证了理论分析的有效性;最后建立了两芯片的并联均流双脉冲实验平台,平台能够调节两支路之间的杂散电感差异,实验结果进一步验证了该文理论分析的有效性。The parallel connection of several chips in the PPI device is an important means to improve its current level.However,the transient current imbalance between IGBT chips is one of the main reasons that limit its current increase.It is important to study the transient current distribution in the PPI IGBT device for the package design.The existing research usually adopts the simulation method,but it does not consider the internal physical process of IGBT,and the simulation results often have a big deviation from the experimental results.In this paper,an integrated circuit model containing the package stray inductance and the internal physical characteristics of IGBT is established,and the influence law of the stray inductance on the current distribution is obtained.After that,the validity of the simulation results is verified by the double-pulse experiment platform.Firstly,three stray inductances inside the 3.3 kV/1500 A PPI device are extracted,and the differences in stray inductances under different IGBT chip positions are obtained.It is found that the maximum difference of emitter stray inductance is 15.36 nH and the change rate of emitter stray inductance is 43.43%,the maximum difference of gate stray inductance is 8.84 nH and the change rate of gate stray inductance is 11.22%.Secondly,three stray inductance differences are analyzed in theory,it is found that the current imbalance of IGBT chips is mainly affected by emitter stray inductance on the common branch of the power circuit and drive circuit.At the same time,the carrier behavior inside IGBT is analyzed,and it is found that the difference of emitter stray inductance mainly affects the current imbalance in the turn-on process.Then,an IGBT integrated simulation circuit is established in the simulation software,which includes the packaged stray inductance and the internal physical characteristics of IGBT chips.The difference of each stray inductance is calculated,and the influence rule of each stray inductor difference on the current distribution is obtained

关 键 词：压接型IGBT器件 瞬态均流 功率回路 驱动回路 杂散电感 

分 类 号：TN307[电子电信—物理电子学] TM46[电气工程—电器]