Electronic Structure of the Weak Topological Insulator Candidate Zintl Ba_(3)Cd_(2)Sb_(4)  

作　　者：黄杰瑞 张坦 徐升 饶志成 李佳俊 刘俊德 高顺业 黄耀波 朱文亮 夏天龙 翁红明 钱天 Jierui Huang;Tan Zhang;Sheng Xu;Zhicheng Rao;Jiajun Li;Junde Liu;Shunye Gao;Yaobo Huang;Wenliang Zhu;Tianlong Xia;Hongming Weng;Tian Qian(Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Department of Physics,Renmin University of China,Beijing 100872,China;Beijing Key Laboratory of Opto-electronic Functional Materials&Micro-nano Devices,Renmin University of China,Beijing 100872,China;Shanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201204,China;School of Physics and Information Technology,Shaanxi Normal University,Xi’an 710119,China;Songshan Lake Materials Laboratory,Dongguan 523808,China;CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Department of Physics,Renmin University of China,Beijing 100872,China [4]Beijing Key Laboratory of Opto-electronic Functional Materials&Micro-nano Devices,Renmin University of China,Beijing 100872,China [5]Shanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201204,China [6]School of Physics and Information Technology,Shaanxi Normal University,Xi’an 710119,China [7]Songshan Lake Materials Laboratory,Dongguan 523808,China [8]CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China

出　　处：《Chinese Physics Letters》2023年第4期44-49,共6页中国物理快报（英文版）

基　　金：supported by the National Key R&D Program of China(Grant Nos.2022YFA1403800,2018YFA0305700,and 2019YFA0308602);the Chinese Academy of Sciences(Grant Nos.QYZDB-SSW-SLH043,XDB33000000,and XDB28000000);the National Natural Science Foundation of China (Grant Nos.U22A600018,U1832202,12074425,11874422,11925408,11921004,and 12188101);the Informatization Plan of Chinese Academy of Sciences (Grant No.CAS-WX2021SF-0102);the Synergetic Extreme Condition User Facility (SECUF)。

摘　　要：One of the greatest triumph of condensed matter physics in the past ten years is the classification of materials by the principle of topology.The existence of topological protected dissipationless surface state makes topological insulators great potential for applications and hotly studied.However,compared with the prosperity of strong topological insulators,theoretical predicted candidate materials and experimental confirmation of weak topological insulators(WTIs) are both extremely rare.By combining systematic first-principles calculation and angle-resolved photoemission spectroscopy measurements,we have studied the electronic structure of the dark surface of the WTI candidate Zintl Ba_(3)Cd_(2)Sb_(4)and another related material Ba_(3)Cd_(2)As_(4).The existence of two Dirac surface states on specific side surfaces predicted by theoretical calculations and the observed two band inversions in the Brillouin zone give strong evidence to prove that the Ba_(3)Cd_(2)Sb_(4)is a WTI.The spectroscopic characterization of this Zintl Ba_(3)Cd_(2)N_(4)(N = As and Sb) family materials will facilitate applications of their novel topological properties.

关 键 词：properties TOPOLOGICAL RARE 

分 类 号：O469[理学—凝聚态物理]