A non-destructive channel stress characterization for gate-allaround nanosheet transistors by confocal Raman methodology  

作　　者：Ziqiang Huang Tao Liu Jingwen Yang Xin Sun Kun Chen Dawei Wang Hailong Hu Min Xu Chen Wang Saisheng Xu David Wei Zhang 

机构地区：[1]School of Microelectronics,Fudan University,Shanghai 200433,China [2]Shanghai Integrated Circuit Manufacturing Innovation Center Company Ltd.,Shanghai 200433,China [3]Zhangjiang Fudan International Innovation Center,Shanghai 200433,China [4]WITec(Beijing)Scientific Technology Co.,Ltd.,Beijing 100027,China

出　　处：《National Science Open》2023年第2期37-45,共9页国家科学进展（英文）

基　　金：supported by the platform for the development of next generation integration circuit technology.

摘　　要：Non-destructive stress characterization is essential for gate-all-around(GAA)nanosheet(NS)transistors technology,while it is a big challenge to be realized on nanometer-sized GAA devices by using traditional Micro-Raman spectroscopy due to its light spot far exceeding the device.In this work,a non-destructive stress characterization methodology of confocal Raman spectroscopy was proposed and performed for GAANS device fabrication.Channel stress evolution along the fabrication process was successfully characterized by designing high-density NS array and analyzing the linear scanned spectra in different structures.The related mechanism of stress evolution was systematically studied by Sentaurus process simulation.Additionally,applying this methodology on detecting the bending of suspended NS after channel release process was demonstrated.Therefore,this work might provide a promising solution to realize in-line characterization of channel stress in GAA NS transistors and process monitor of NS channel integrity.

关 键 词：non-destructive characterization channel stress gate all around(GAA) confocal Raman 

分 类 号：TN386[电子电信—物理电子学]