具有高比电容的纳米Ni-MOF/GO的制备及赝电容特性研究  

Preparation and pseudocapacitance performance of Ni-MOF/GO nanomaterial with high specific capacitance

作　　者：孙杨 程子洋 魏居媛 李欣雨 方静怡 汪美芳 Sun Yang;Cheng Ziyang;Wei Juyuan;Li Xinyu;Fang Jingyi;Wang Meifang(School of Chemical and Environmental Engineering,Anhui polytechnic University,Wuhu 241000;School of Pharmacy,Wannan Medical College,Wuhu 241000;The Key Laboratory of Antinflammatory and Immune Medicine,Ministry of Education,Institute of Clinical Pharmacology,Anhui Medical University,Hefei 230032)

机构地区：[1]安徽工程大学化学与环境工程学院,芜湖241000 [2]皖南医学院药学院,芜湖241000 [3]安徽医科大学临床药理研究所,抗炎与免疫医学教育部重点实验室,合肥230032

出　　处：《化工新型材料》2023年第5期106-112,共7页New Chemical Materials

基　　金：安徽工程大学引进人才科研启动基金项目(2020YQQ014);2020年省级大学生创新训练计划(S202010368053);“洁净能源材料与资源物质转化化学”安徽省重点实验室开放基金资助项目(LCECSC-14);安徽省高等教育自然科学基金项目(KJ2020A0619);抗炎免疫药物教育部重点实验室基金项目(KFJJ-2020-10)。

摘　　要：以不同温度和不同制备时间作为实验条件,采用溶剂热法制备了1#、2#、3#三类Ni-MOF材料。然后,将MOF材料中的3#和氧化石墨烯(GO)等多孔碳材料复合,测得其具有优异的电化学性能。3#在50mA/g时的比电容达700F/g,在500mA/g通过100次循环后仍有电容为222F/g,可保持3#器件初始电容的58.9%以上。3#/GO在500mA/g时表现出412F/g的高质量比电容,并且在100次循环后,保持其初始电容的72%以上。该器件的最大能量密度和最大功率密度分别为11.58Wh/kg和46.32W/kg。通过X射线衍射、X射线光电子能谱技术、比表面积和氮气吸脱附、红外光谱和扫描电子显微镜等测试,证实了GO能显著地改善MOF赝电容的电化学性能。Three types of Ni-MOF materials,1~#,2~#and 3~#,were prepared by solvothermal method at different temperature and preparation time.Then,the 3~#material was compounded with graphene oxide(GO)and other porous carbon materials,and their excellent electrochemical performance was measured.3~#had a specific capacitance of 700F/g at 50mA/g and still had a capacitance of 222F/g at 500mA/g after 100 cycles.Moreover,it could maintain more than 58.9%of the initial capacitance.3~#/GO exhibited a higher specific capacitance of 412F/g at 500mA/g,and maintained more than 72%of its initial capacitance after 100 cycles.The maximum energy density and maximum power density of the device were 11.58Wh/kg and 46.32W/kg,respectively.XRD,XPS,BET,FT-IR and SEM tests confirmed that GO could significantly improve the electrochemical performance of the MOF pseudocapacitor.

关 键 词：赝电容 MOF 氧化石墨烯 

分 类 号：O646[理学—物理化学]