Investigations on the Optimization of Contacts Barrier Height for the Improved Performance of ZnO/CdS/CZTS Solar Cells  

作　　者：Fatiha Daoudi Abdelkrim Naas Omar Meglali Radia Boudaira Ahmed Gueddim A.M.Saeed 

机构地区：[1]Material Science and Informatics Laboratory,University of Djelfa,Djelfa,17000,Algeria [2]Faculty of Sciences,University of M’sila,M’sila,28000,Algeria [3]Department of Physics,University of Constantine,Constantine,25000,Algeria [4]Department of Physics,Division of Science and Technology,University of Education,Lahore,Pakistan

出　　处：《Energy Engineering》2023年第8期1803-1815,共13页能源工程（英文）

摘　　要：The numerical simulations were performed using the AMPS-1D simulator to study the effects of the CZTS as an absorber layer and the contacts’barrier height on the performance of four ZnO/CdS/CZTS solar cells.To obtain the best cell performances,the barrier heights of the back and front contacts were adjusted between 0.01,0.77,0.5,and 1.55 eV,respectively.For simulations,we used the lifetime mode,and the device performances were evaluated under AM1.5 illumination spectra.We found that the efficiency,fill factor,and open-circuit voltage were almost constant at a front contact barrier height of less than 0.31 eV.The short-current density was not affected by the front contact barrier height.The back contact material had a significant impact on the CZTS cells parameters.The best performance was obtained for the CZTS550 cell with JSC=29.53 mA/cm2,VOC=1.07 V,FF=0.88,andη=28.08%at barrier heights of 0.31 and 1.55 eV for front and back contacts,respectively.The conduction band offset at the CZTS550/CdS hetero-junction was found to be spike-like with 0.21 eV.The obtained conversion efficiency is comparable to those previously reported in the literature.

关 键 词：CZTS solar cell barrier height AMPS-1D photovoltaic parameters 

分 类 号：TM914.4[电气工程—电力电子与电力传动]