Enabling monodisperse perovskite phase with buried interface modification toward efficient light-emitting diodes  

作　　者：Maowei Jiang Xiaomeng Zhang Feijiu Wang 

机构地区：[1]Key Laboratory for Special Functional Materials(Ministry of Education of China),National&Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology,School of Materials Science,Henan University,Kaifeng 475004,China [2]Henan Key Laboratory of Photovoltaic Materials,Henan University,Kaifeng 475004,China

出　　处：《Nano Research Energy》2023年第3期38-47,共10页纳米能源研究（英文）

摘　　要：The performance of perovskite light-emitting diodes(PeLEDs)has been drastically improved recently.Therein,the coexistence of polydisperse perovskite domains has been one worthy subject of study.The crystallization of perovskite is affected by the buried interface character with the bottom contact layer;and the trap states also inherently exist at the buried interface of the perovskite film,which induce the nonradiative recombination and impede the PeLED performance.In this work,we focus on the crystallization modulation of monodisperse perovskite nanodomains toward high-performance PeLEDs.We show that a LiBr pre-modification layer on the bottom substrate induces the formation of monodisperse perovskite phase.In this system,the carrier transferring process deriving from the polydisperse phases is reduced.In addition,the LiBr pre-modification layer at the buried interface minimizes the trap states and enhances the radiative recombination of perovskites.Accordingly,our PeLEDs show a champion external quantum efficiency(EQE)of 25.5%for 4 mm2 device,and 22.9%for 100 mm^(2)device.

关 键 词：perovskite light-emitting diode monodisperse phase defect passivation buried interface large area device 

分 类 号：TN312.8[电子电信—物理电子学]