Gate-tunable spin valve effect in Fe_(3)GeTe_(2)-based van der Waals heterostructures  

作　　者：Ling Zhou Junwei Huang Ming Tang Caiyu Qiu Feng Qin Caorong Zhang Zeya Li Di Wu Hongtao Yuan 

机构地区：[1]National Laboratory of Solid State Microstructures,Jiangsu Key Laboratory of Artificial Functional Materials,College of Engineering and Applied Sciences,and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing,the People's Republic of China

出　　处：《InfoMat》2023年第3期1-10,共10页信息材料（英文）

基　　金：supported by the National Natural Sci-ence Foundation of China(91750101,21733001,52072168,51861145201);the National Key Basic Research Program of the Ministry of Science and Technology of China(2018YFA0306200,2021YFA1202901);the Fundamental Research Funds for the Central Universities(021314380078,021314380104,021314380147);Jiangsu Key Laboratory of Artificial Functional Materials.

摘　　要：Magnetic tunnel junctions(MTJs),a prominent type of spintronic device based on the spin valve effect,have facilitated the development of numerous spintronic applications.The technical appeal for the next-generation MTJ devices has been proposed in two directions:improving device performance by utilizing advanced two-dimensional(2D)ferromagnetic materials or extending device functionalities by exploring the gate-tunable magnetic properties of ferromagnets.Based on the recent development of 2D magnets with the ease of external stimuli,such as electric field,due to their reduced dimensions,reliable prospects for gate-tunable MTJ devices can be achieved,shedding light on the great potential of next-generation MTJs with multiple functionalities for various application environments.While the electrical gate-tunable MTJ device is highly desirable for practical spintronic devices,it has not yet been demonstrated.Here,we demonstrate the experimental realization of a spin valve device by combining a vertical Fe_(3)GeTe_(2)/h-BN/Fe_(3)GeTe_(2) MTJ with an electrolyte gate.The magnetoresistance ratio(MR ratio)of 36%for the intrinsic MTJ confirms the good performance of the device.By electrolyte gating,the tunneling MR ratio of Fe_(3)GeTe_(2)/h-BN/Fe_(3)GeTe_(2) MTJ can be elevated 2.5 times,from 26%to 65%.Importantly,the magnetic fields at which the magnetoresistance switches for the MTJ can be modulated by electrical gating,providing a promising method to control the magnetization configuration of the MTJ.Our work demonstrates a gate-tunable MTJ device toward the possibility for gate-controlled spintronic devices,paving the way for performing 2D magnetism manipulations and exploring innovative spintronic applications.

关 键 词：Fe_(3)GeTe_(2)magnetic tunnel junction MAGNETORESISTANCE spin valve van der Waals heterostructure 

分 类 号：O48[理学—固体物理]