Carrier recombination suppression and transport enhancement enable high-performance self-powered broadband Sb_(2)Se_(3) photodetectors  

作　　者：Shuo Chen Yi Fu Muhammad Ishaq Chuanhao Li Donglou Ren Zhenghua Su Xvsheng Qiao Ping Fan Guangxing Liang Jiang Tang 

机构地区：[1]Shenzhen Key Laboratory of Advanced Thin Films and Applications,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen,Guangdong,the People's Republic of China [2]MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials,Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials,Guangxi University,Nanning,Guangxi,the People's Republic of China [3]State Key Laboratory of Silicon Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou,Zhejiang,the People's Republic of China [4]Wuhan National Laboratory for Optoelectronics(WNLO),School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan,Hubei,the People's Republic of China

出　　处：《InfoMat》2023年第4期60-76,共17页信息材料（英文）

基　　金：supported by National Natural Science Foundation of China(No.62104156,62074102);Guangdong Basic and Applied Basic Research Foundation(2020A1515010805,2022A1515010979)China;Science and Technology plan project of Shenzhen(20200812000347001,20220808165025003)China;supported by open foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials,Guangxi University(Grant No.2022GXYSOF13)。

摘　　要：Antimony selenide(Sb_(2)Se_(3))is a promising candidate for photodetector applications boasting unique material benefits and remarkable optoelectronic properties.Achieving high-performance self-powered Sb_(2)Se_(3)photodetector through a synergistic regulation of absorber layer and heterojunction interface demonstrates great potential and needs essential investigation.In this study,an effective two-step thermodynamic/kinetic deposition technique containing sputtered and selenized Sb precursor is implemented to induce self-assembled growth of Sb_(2)Se_(3)light absorbing thin film with large crystal grains and desirable[hk1]orientation,presenting considerable thin-film photodetector performance.Furthermore,aluminum(Al^(3+))cation dopant is introduced to modify the optoelectronic properties of CdS buffer layer,and further optimize the Sb_(2)Se_(3)/CdS(Al)heterojunction interface quality.Thanks to the suppressed carrier recombination and enhanced carrier transport kinetics,the champion Mo/Sb_(2)Se_(3)/CdS(Al)/ITO/Ag photodetector exhibits self-powered and broadband characteristics,accompanied by simultaneously high responsivity of 0.9 A W^(-1)(at 11 nW cm^(-2)),linear dynamic range of 120 dB,impressive ON/OFF switching ratio over 10^(6)and signal-to-noise ratio of 10^(9),record total noise determined realistic detectivity of 4.78×10^(12)Jones,and ultra-fast response speed with rise/decay time of 24/75 ns,representing the top level for Sb_(2)Se_(3)-based photodetectors.This intriguing work opens up an avenue for its selfpowered broadband photodetector applications.

关 键 词：PHOTORESPONSE recombination suppression Sb_(2)Se_(3) self-powered photodetector transport enhancement 

分 类 号：TN215[电子电信—物理电子学]