纳秒脉冲电压下两种自触发开关的设计与实验研究  被引量:1

Design and experimental study of two types of low jitter self-triggeredswitches under nanosecond pulse voltage

在线阅读下载全文

作  者:崔光曦 李俊娜[1] 王海洋 陈旭良 王永亮 刘建 李楚男 李奇胜 石凌 Cui Guangxi;Li Junna;Wang Haiyang;Chen Xuliang;Wang Yongliang;Liu Jian;Li Chunan;Li Qisheng;Shi Ling(State Key Laboratory of Electrical Insulation and Power Equipment,Xi’an Jiaotong University,Xi’an 710049,China;State Key Laboratory of Environmental Simulation and Effects of Intense Pulse Radiation,Xi’an 710024,China)

机构地区:[1]西安交通大学电力设备电气绝缘国家重点实验室,西安710049 [2]强脉冲辐射环境模拟与效应国家重点实验室,西安710024

出  处:《强激光与粒子束》2023年第7期126-133,共8页High Power Laser and Particle Beams

基  金:国家自然科学基金项目(52177157)。

摘  要:降低纳秒脉冲电压下气体开关的抖动对电磁脉冲模拟装置输出稳定性具有重要意义。特别在受条件约束、外触发不便的条件下,自触发开关抖动的降低值得关注。设计了两种自触发开关,包含阴极刻槽开关和预电离开关,并搭建了纳秒脉冲实验平台,分别在40 ns、70 ns与120 ns三种脉冲前沿下测量了两种开关的击穿电压、时延等参数,通过数据统计与处理,获得了两种开关的击穿电压及时间抖动。实验结果表明:通过阴极刻槽控制发射或者阴极预电离注入的方式均可有效降低开关的击穿抖动;在三种前沿的脉冲电压下两种开关的击穿抖动均在1~1.8 ns之间;在40 ns和70 ns前沿脉冲作用下,阴极刻槽的开关击穿抖动更低,可小于1.2 ns,击穿电压分散性小于1.29%;在120 ns前沿脉冲作用下,阴极预电离开关击穿抖动更低,可小于1.6 ns。It is important to reduce the jitter of gas switch under nanosecond pulse voltage for the outputstability of electromagnetic pulse simulator.Especially under the condition that external triggering is inconvenient,thereduction of the jitter of self-triggered switch is worth paying attention to.In this paper,two types of self-triggeredswitches are designed,including the cathode grooved switch and the preionization switch.A nanosecond pulseexperimental platform was built and the breakdown voltage,time delay and other parameters of the two types ofswitches are measured at three different pulse rise time of 40 ns,70 ns and 120 ns respectively.With the use of datastatistics and processing,the breakdown voltage and time jitter of the two switches are obtained.The experimentalresults show that the breakdown jitter of the switch can be effectively reduced by cathode grooved control emission orcathode preionization injection;The jitters of the two switches are between 1~1.8 ns under three rise time pulsevoltages;Under the rise time of 40 ns and 70 ns pulses,the jitter of cathode grooved switch is shorter,which can beless than 1.2 ns,and the breakdown voltage dispersion is less than 1.29%;Under rise time of 120 ns pulse,the jitter ofpreionization switch is shorter than 1.6 ns.

关 键 词:纳秒脉冲 自触发开关 低抖动 预电离 刻槽电极 

分 类 号:TM89[电气工程—高电压与绝缘技术]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象