Preparation and photodetection performance of high crystalline quality and large size β-Ga_(2)O_(3)microwires  

作　　者：Yuefei Wang Yurui Han Chong Gao Bingsheng Li Jiangang Ma Haiyang Xu Aidong Shen Yichun Liu 

机构地区：[1]Key Laboratory of UV Light Emitting Materials and Technology,Ministry of Education,Northeast Normal University,Changchun 130024,China [2]Department of Electrical Engineering,The City College of New York,New York,NY 10031,USA

出　　处：《Journal of Semiconductors》2023年第6期75-79,共5页半导体学报（英文版）

基　　金：supported by the National Key R&D Program of China(Grant No.2019YFA0705202);the National Natural Science Foundation of China(Grant Nos.62274027 and 31701296)。

摘　　要：Ultrawide band gap semiconductors are promising solar-blind ultraviolet(UV)photodetector materials due to their suitable bandgap,strong absorption and high sensitivity.Here,β-Ga_(2)O_(3)microwires with high crystal quality and large size were grown by the chemical vapor deposition(CVD)method.The microwires reach up to 1 cm in length and were single crystalline with low defect density.Owing to its high crystal quality,a metal–semiconductor–metal photodetector fabricated from a Ga_(2)O_(3)microwire showed a responsivity of 1.2 A/W at 240 nm with an ultrahigh UV/visible rejection ratio(R_(peak)/R_(400 nm))of 5.8×10^(5),indicating that the device has excellent spectral selectivity.In addition,no obvious persistent photoconductivity was observed in the test.The rise and decay time constants of the device were 0.13 and 0.14 s,respectively.This work not only provides a growth method for high-quality Ga_(2)O_(3)microwires,but also demonstrates the excellent performance of Ga_(2)O_(3)microwires in solar-blind ultraviolet detection.

关 键 词：solar-blind photodetector β-Ga_(2)O_(3) MICROWIRE 

分 类 号：TN36[电子电信—物理电子学]