随机PWM控制时IGBT的开关损耗分析  

Analysis of Switching Loss of IGBT Under Random PWM Control

作　　者：刘子慧 马家庆 LIU Zi-hui;MA Jia-qing(Guizhou University,Guiyang 550025,China)

机构地区：[1]贵州大学,电气工程学院,贵州贵阳550025

出　　处：《电力电子技术》2023年第5期130-132,共3页Power Electronics

基　　金：国家自然科学基金(62163006);智能机电装备设计与应用技术研究团队(2021YJTD04)。

摘　　要：在绝缘栅双极型晶体管(IGBT)模块中引入随机脉宽调制(PWM)控制时,开关损耗会得到有效降低。为分析这种控制方式作用于IGBT时其开关损耗降低的原因,针对其导通和关断过程中的开关损耗状况和在IGBT模块内部的能量损耗状态以及产热特性的基础上,利用焦耳热原理对采用随机PWM技术时IGBT开关损耗会降低的过程进行了分析。对随机占空比、随机载波和随机死区3种随机PWM建立的统一的损耗数学模型进行研究。通过实验验证该分析方法能较好地表达出IGBT模块中的开关损耗的温升抑制规律,进而从焦耳热角度揭示了IGBT模块产生的开关损耗机理,表明此分析方法可应用于实际工程中。When random pulse width modulation(PWM)control is introduced into insulated gate bipolar transistor(IGBT)module,switching loss will be effectively reduced.In order to analyze the reasons for the reduction of switching loss when this control mode acts on ICBT,the process of reducing the switching loss of IGBT when using random PWM technology based on the switching loss during its on and off process is analyzed,the energy loss state inside the IGBT module and the heat generation characteristics.A unified loss mathematical model of random duty cycle,random carrier and random dead time PWM is established for research.The experimental results show that the analysis method can achieve the temperature rise inhibition rule of the switching loss in IGBT modules,and then reveal the switching loss mechanism of IGBT modules from the joule heat point of view,indicating that the analysis method can be applied to practical projects.

关 键 词：绝缘栅双极型晶体管 开关损耗 随机脉宽调制 温升 

分 类 号：TN32[电子电信—物理电子学]