结构参数对各向异性磁电阻(AMR)磁场传感器性能的影响  

Effects of structural parameters on the performance of anisotropic magnetoresistive magnetic sensor

作　　者：王华昌[1] 罗科 李秀霞 余涛 孙成 冯伟 张文旭[3] WANG Hua-chang;LUO Ke;LI Xiu-xia;YU Tao;SUN Cheng;FENG Wei;ZHANG Wen-xu(Sichuan Yongxing Electronics Co,Ltd,Chengdu 610500,China;Guizhou Yaguang Electronics Co,Ltd,Guiyang 550016,China;School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]四川永星电子有限公司,四川成都610500 [2]贵州雅光电子股份有限公司,贵州贵阳550016 [3]电子科技大学电子科学与工程学院,四川成都610054

出　　处：《磁性材料及器件》2023年第3期72-76,共5页Journal of Magnetic Materials and Devices

摘　　要：采用磁控溅射工艺制备NiFe合金薄膜,通过电子束蒸发制备Barber电极,获得了各向异性磁电阻(AMR)线性磁场传感器。通过材料芯片技术,系统研究了图形化的NiFe薄膜宽度、厚度以及Barber电极角度、间距等因素对传感器性能的影响。测试结果表明,在设计的工艺条件下,NiFe薄膜宽度为36μm、厚度为28 nm、Barber电极角度为40°以及电极间距为10μm时,该磁场传感器在磁场范围为±5 G内灵敏度最大,达到1.17 mV/(V·G)。研究工作为进一步发展基于AMR效应的角度及磁场传感器芯片提供参考。Using NiFe alloy thin film prepared by magnetron sputtering process and Barber-pole prepared by electron beam evaporation process,the magnetic sensor based on anisotropic magnetoresistance(AMR)effect was realized.Through the material chip technology,the influence of the width and thickness of the patterned NiFe thin film,the angle and distance of the Barber-pole on the output performance of the magnetic sensor were systematically analyzed.The results show that,the sensor features a maximum sensitivity 1.17 mV/(V·G)within a magnetic field range of±5 G with NiFe film width of 36μm and thickness of 28 nm,barber-pole angle of 40°,and electrode spacing of 10μm.The research work provides a reference for the further development of angle and magnetic field sensor chips based on the AMR effect.

关 键 词：AMR磁场传感器 NiFe薄膜 Baber电极 输出电压 灵敏度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]